型号 功能描述 生产厂家&企业 LOGO 操作

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance:RDS(on)=0.38Ωtyp. •Lowleakagecurrent:IDSS=1µAmax(atVDS=200V) •Highspeedswitching:tf=10nstyp(atVGS=10V,VDD=100V,ID=4A) •Lowgatecharge:Qg=14nCtyp(atVDD=160V,VGS=10V,ID=8A) •Avalancheratings

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance:RDS(on)=0.38Ωtyp. •Lowleakagecurrent:IDSS=1µAmax(atVDS=200V) •Highspeedswitching:tf=10nstyp(atVGS=10V,VDD=100V,ID=4A) •Lowgatecharge:Qg=14nCtyp(atVDD=160V,VGS=10V,ID=8A) •Avalancheratings

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance:RDS(on)=0.38Ωtyp. •Lowleakagecurrent:IDSS=1µAmax(atVDS=200V) •Highspeedswitching:tf=10nstyp(atVGS=10V,VDD=100V,ID=4A) •Lowgatecharge:Qg=14nCtyp(atVDD=160V,VGS=10V,ID=8A) •Avalancheratings

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance:RDS(on)=0.38Ωtyp. •Lowleakagecurrent:IDSS=1µAmax(atVDS=200V) •Highspeedswitching:tf=10nstyp(atVGS=10V,VDD=100V,ID=4A) •Lowgatecharge:Qg=14nCtyp(atVDD=160V,VGS=10V,ID=8A) •Avalancheratings

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

N-ChannelMOSFETusesadvancedtrenchtechnology

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DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
更新时间:2024-5-22 9:08:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
22+
TO-252
32350
原装正品 假一罚十 公司现货
原装正品
23+
TO-251
42716
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS/瑞萨
22+
TO-252
50000
只做原装假一罚十,欢迎咨询
RENESAS
2023+
TO-252
700000
柒号芯城跟原厂的距离只有0.07公分
RENESAS
21+
TO-252
50000
全新原装正品现货,支持订货
RENESAS
4
TO-252
3100
全新原装 实单必成
POWER
2020+
TO252
12500
原装正品现货
POWER
2022+
TO252
57550
RENESAS
4
TO-252
13026
全新原装,支持实单,假一罚十,德创芯微
RENESAS
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。

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