型号 功能描述 生产厂家&企业 LOGO 操作
2SK3355-Z

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •LowCiss:Ciss=9800pFTYP. •

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3355-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3355-Z

iscN-ChannelMOSFETTransistor

文件:401.51 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=9800pFTYP. ●Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •LowCiss:Ciss=9800pFTYP. •

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscN-ChannelMOSFETTransistor

文件:333.32 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •LowCiss:Ciss=9800pFTYP. •

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscN-ChannelMOSFETTransistor

文件:401.64 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •LowCiss:Ciss=9800pFTYP. •

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SK3355-Z产品属性

  • 类型

    描述

  • 型号

    2SK3355-Z

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

更新时间:2024-3-19 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENEASA
SOT263
608900
原包原标签100%进口原装常备现货!
NEC
23+
TO-263
35890
NEC
07+
TO-263
36800
NEC
23+
TO-263
7600
全新原装现货
NEC
23+
TO-220SMD
90000
只做原厂渠道价格优势可提供技术支持
RENESAS/瑞萨
2022+
TO-263
50000
原厂代理 终端免费提供样品
NEC
23+
NA/
922
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
2020+
TO263
15000
原装正品现货
RENESAS
23+
TO-263
35400
全新原装真实库存含13点增值税票!
NEC
2339+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!

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