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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3353-Z | SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •LowCiss:Ciss=4650pFTYP. •Built-in | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
2SK3353-Z | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •Lo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
2SK3353-Z | iscN-ChannelMOSFETTransistor 文件：401.5 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •Lo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features ●Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) ●LowCiss:Ciss=4650pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •LowCiss:Ciss=4650pFTYP. •Built-in | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：333.31 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) •Lo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：327.34 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SK3353-Z产品属性
- 类型
描述
- 型号
2SK3353-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
2339+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
23+ |
TO-220AB |
12118 |
全新原装 |
|||
NEC |
22+23+ |
TO263 |
7573 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
2023+ |
MP-25ZTO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NEC |
23+ |
TO-220 |
35890 |
||||
NEC |
08+(pbfree) |
TO-263 |
8866 |
||||
NEC |
21+ |
TO-263 |
35200 |
一级代理/放心采购 |
|||
NEC |
TO-263 |
503143 |
16余年资质 绝对原盒原盘 更多数量 |
||||
NEC-日本电气 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
2SK3353-Z芯片相关品牌
2SK3353-Z规格书下载地址
2SK3353-Z参数引脚图相关
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2SK3353-Z数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
2021-6-242SK508G-K51-AE3-R
属性参数值 商品目录结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C时）50mA 漏源电压（Vdss）15V 类型N沟道 最大功率耗散（Ta=25°C）200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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