位置：首页 > IC中文资料第1311页 > 2SK330-GR(F)
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NCHANNELJUNCTIONTYPE(FORAUDIOAMPLIFIER,ANALOGSWITCH,CONSTANTCURRENTANDIMPEDANCECONVERTERAPPLICATIONS) *Highbreakdownvoltage:VGDS=−50V *Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) *LowRDS(ON):RDS(ON)=320Ω(typ.)(IDSS=5mA) *Complementaryto2SJ105 *Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   | |
MINIPACKAGESERIES Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SiliconNChannelJunctionTypeForAudioAmplifier,AnalogSwitch,ConstantCurrentandImpedanceConverterApplications 文件：655.6 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK330-GR(F)产品属性
- 类型
描述
- 型号
2SK330-GR(F)
- 制造商
Toshiba America Electronic Components
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJI |
1305+ |
TO-220 |
12000 |
公司特价原装现货 |
|||
T |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
|||
RENESAS(瑞萨)/IDT |
23+ |
6000 |
|||||
TOSHIBA |
2020+ |
TO-220SM |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
NEC |
22+ |
TO-220F |
360000 |
进口原装房间现货实库实数 |
|||
NES |
专业铁帽 |
TO-92 |
3 |
原装铁帽专营,代理渠道量大可订货 |
|||
NEC |
05+ |
PBF |
880000 |
明嘉莱只做原装正品现货 |
|||
VBSEMI |
19+ |
TO-220 |
29600 |
绝对原装现货,价格优势! |
|||
TOSHIBA |
23+ |
2800 |
正品原装货价格低qq:2987726803 |
||||
NEC |
22+ |
TO263 |
25000 |
原装现货,价格优惠,假一罚十 |
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2SK330-GR(F)规格书下载地址
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2SK330-GR(F)数据表相关新闻
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
2021-6-242SK508G-K51-AE3-R
属性参数值 商品目录结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C时）50mA 漏源电压（Vdss）15V 类型N沟道 最大功率耗散（Ta=25°C）200mW
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2020-3-28
DdatasheetPDF页码索引
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