型号 功能描述 生产厂家&企业 LOGO 操作
2SK330

NCHANNELJUNCTIONTYPE(FORAUDIOAMPLIFIER,ANALOGSWITCH,CONSTANTCURRENTANDIMPEDANCECONVERTERAPPLICATIONS)

*Highbreakdownvoltage:VGDS=−50V *Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) *LowRDS(ON):RDS(ON)=320Ω(typ.)(IDSS=5mA) *Complementaryto2SJ105 *Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK330

MINIPACKAGESERIES

Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK330

SiliconNChannelJunctionTypeForAudioAmplifier,AnalogSwitch,ConstantCurrentandImpedanceConverterApplications

文件:655.6 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,SWITCHINGREGULATOR,DC-DCCONVERTERAPPLICATIONS)

SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=15Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.65S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmode:Vth=2.4to3.4V(VDS=10V,ID=1m

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SwitchingRegulatorandDC-DCConverterApplications

SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=15Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.65S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmode:Vth=2.4to3.4V(VDS=10V,ID=1m

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SwitchingRegulator,DC-DCConverterApplications

SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=11.5Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.4S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) •Enhancementmodel:Vth=2.0~4.0V(VDS=10V,ID=1

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3304isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply. FEATURES •Lowgatecharge:QG=44nCTYP.(VDD=450V,VGS=10V,ID=7.0A) •Gat

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3304isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasswitchingpowersupply. FEATURES •Lowgatecharge: QG=44nCTYP.(VDD=4

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFieldEffectTransistor

Features Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID=5.0A) Gatevoltagerating±30V Lowon-stateresistance RDS(on)=1.5ΩMAX.(VGS=10V,ID=2.5A) Avalanchecapabilityratings

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3305BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3305BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3306isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

The2SK3306isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3306BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3306BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3307isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=14mΩMAX.(VGS=4.0V,ID=35A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3307isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=14mΩMAX.(VGS=4.0V,ID=35A) •LowCiss:Ciss=46

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.48Ω(typ.) •Highforwardtransferadmittance:|Yfs|=4.3S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=450V) •Enhancement-mode:Vth=3.0~5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNChannelJunctionTypeForAudioAmplifier,AnalogSwitch,ConstantCurrentandImpedanceConverterApplications

文件:655.6 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNChannelMOSTypeSwitchingRegulatorandDC-DCConverterApplications

文件:166.05 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SwitchingRegulatorandDC-DCConverterApplications

文件:150.61 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNChannelMOSTypeSwitchingRegulatorandDC-DCConverterApplications

文件:166.05 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SwitchingRegulatorandDC-DCConverterApplications

文件:150.61 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

iscN-ChannelMOSFETTransistor

文件:330.89 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:398.74 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:347 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNChannelMOSTypeSwitchingRegulatorandDC-DCConverterApplications

文件:190.99 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNChannelMOSTypeSwitchingRegulatorandDC-DCConverterApplications

文件:190.99 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

iscN-ChannelMOSFETTransistor

文件:332.64 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:326.66 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-ChannelMOSFET

文件:1.56283 Mbytes Page:5 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

iscN-ChannelMOSFETTransistor

文件:400.96 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:322.74 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:331.34 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SWITCHINGN-CHANNELPOWERMOSFET

文件:259.829 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNChannelMOSTypeSwitchingRegulatorApplications

文件:220.34 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNChannelMOSTypeSwitchingRegulatorApplications

文件:220.34 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

iscN-ChannelMOSFETTransistor

文件:401.14 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:327.27 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK330产品属性

  • 类型

    描述

  • 型号

    2SK330

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

更新时间:2024-4-26 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
2016+
TO-92S
4730
只做原装,假一罚十,公司可开17%增值税发票!
NEC
2020+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
RENESAS(瑞萨)/IDT
23+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
NES
20+
TO-92
67500
原装优势主营型号-可开原型号增税票
NEC
05+
PBF
880000
明嘉莱只做原装正品现货
東芝
23+
NA/
4050
原装现货,当天可交货,原型号开票
NEC
22+
SOT-263
100000
代理渠道/只做原装/可含税
NEC
09+
TO-263
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS(瑞萨)/IDT
23+
6000
NEC
1942+
TO-263
9852
只做原装正品现货或订货!假一赔十!

2SK330芯片相关品牌

  • ABLIC
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  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

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