位置:首页 > IC中文资料第6136页 > 2SK330
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SK330 | NCHANNELJUNCTIONTYPE(FORAUDIOAMPLIFIER,ANALOGSWITCH,CONSTANTCURRENTANDIMPEDANCECONVERTERAPPLICATIONS) *Highbreakdownvoltage:VGDS=−50V *Highinputimpedance:IGSS=−1nA(max)(VGS=−30V) *LowRDS(ON):RDS(ON)=320Ω(typ.)(IDSS=5mA) *Complementaryto2SJ105 *Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | ||
2SK330 | MINIPACKAGESERIES Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | ||
2SK330 | SiliconNChannelJunctionTypeForAudioAmplifier,AnalogSwitch,ConstantCurrentandImpedanceConverterApplications 文件:655.6 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | ||
NCHANNELMOSTYPE(HIGHSPEED,HIGHVOLTAGESWITCHING,SWITCHINGREGULATOR,DC-DCCONVERTERAPPLICATIONS) SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=15Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.65S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmode:Vth=2.4to3.4V(VDS=10V,ID=1m | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SwitchingRegulatorandDC-DCConverterApplications SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=15Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.65S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmode:Vth=2.4to3.4V(VDS=10V,ID=1m | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SwitchingRegulator,DC-DCConverterApplications SwitchingRegulatorandDC-DCConverterApplications •Lowdrain-sourceONresistance:RDS(ON)=11.5Ω(typ.) •Highforwardtransferadmittance:|Yfs|=0.4S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) •Enhancementmodel:Vth=2.0~4.0V(VDS=10V,ID=1 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3304isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply. FEATURES •Lowgatecharge:QG=44nCTYP.(VDD=450V,VGS=10V,ID=7.0A) •Gat | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3304isN-ChannelMOSFETdevicethatfeaturesaLowgatechargeandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasswitchingpowersupply. FEATURES •Lowgatecharge: QG=44nCTYP.(VDD=4 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFieldEffectTransistor Features Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID=5.0A) Gatevoltagerating±30V Lowon-stateresistance RDS(on)=1.5ΩMAX.(VGS=10V,ID=2.5A) Avalanchecapabilityratings | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3305BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3305BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3305isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowga | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3305isN-channelDMOSFETdevicethat featuresalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP.(VDD=400V,VGS=10V,ID | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3306isN-ChannelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES ·Lowgatecha | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE The2SK3306isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3306BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3306BisN-ChannelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=13nCTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3307isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=14mΩMAX.(VGS=4.0V,ID=35A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3307isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=14mΩMAX.(VGS=4.0V,ID=35A) •LowCiss:Ciss=46 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SwitchingRegulatorApplications SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.48Ω(typ.) •Highforwardtransferadmittance:|Yfs|=4.3S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=450V) •Enhancement-mode:Vth=3.0~5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNChannelJunctionTypeForAudioAmplifier,AnalogSwitch,ConstantCurrentandImpedanceConverterApplications 文件:655.6 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNChannelMOSTypeSwitchingRegulatorandDC-DCConverterApplications 文件:166.05 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SwitchingRegulatorandDC-DCConverterApplications 文件:150.61 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNChannelMOSTypeSwitchingRegulatorandDC-DCConverterApplications 文件:166.05 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SwitchingRegulatorandDC-DCConverterApplications 文件:150.61 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscN-ChannelMOSFETTransistor 文件:330.89 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:398.74 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:347 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNChannelMOSTypeSwitchingRegulatorandDC-DCConverterApplications 文件:190.99 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNChannelMOSTypeSwitchingRegulatorandDC-DCConverterApplications 文件:190.99 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscN-ChannelMOSFETTransistor 文件:332.64 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:326.66 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelMOSFET 文件:1.56283 Mbytes Page:5 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:400.96 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:322.74 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:331.34 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SWITCHINGN-CHANNELPOWERMOSFET 文件:259.829 Kbytes Page:10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNChannelMOSTypeSwitchingRegulatorApplications 文件:220.34 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNChannelMOSTypeSwitchingRegulatorApplications 文件:220.34 Kbytes Page:6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscN-ChannelMOSFETTransistor 文件:401.14 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:327.27 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
2SK330产品属性
- 类型
描述
- 型号
2SK330
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
2016+ |
TO-92S |
4730 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
RENESAS(瑞萨)/IDT |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NES |
20+ |
TO-92 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
05+ |
PBF |
880000 |
明嘉莱只做原装正品现货 |
|||
東芝 |
23+ |
NA/ |
4050 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
09+ |
TO-263 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS(瑞萨)/IDT |
23+ |
6000 |
|||||
NEC |
1942+ |
TO-263 |
9852 |
只做原装正品现货或订货!假一赔十! |
2SK330规格书下载地址
2SK330参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
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- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SK3326
- 2SK3325
- 2SK3324
- 2SK3322
- 2SK3321
- 2SK3320
- 2SK332
- 2SK3318
- 2SK3316
- 2SK3314
- 2SK3313
- 2SK3312
- 2SK3310
- 2SK3309
- 2SK3307-A
- 2SK3307
- 2SK3306-AZ
- 2SK3306
- 2SK3305-ZJ
- 2SK3305-Z-E1-AZ
- 2SK3305-Z(AZ)
- 2SK3305-S
- 2SK3305-AZ
- 2SK3305
- 2SK3304-A
- 2SK3304
- 2SK3302
- 2SK3301Q
- 2SK3301_10
- 2SK3301_06
- 2SK3301(TE16L1,NQ)
- 2SK3301(SM)
- 2SK3301(Q)
- 2SK3301
- 2SK330_07
- 2SK33
- 2SK3299-ZJ
- 2SK3299-S
- 2SK3299
- 2SK3298-AZ
- 2SK3298
- 2SK3297(AZ)
- 2SK3297
- 2SK3296-ZK
- 2SK3296-ZJ
- 2SK3296-S
- 2SK3296
- 2SK3295-ZK
- 2SK3295-ZJ
- 2SK3295-S
- 2SK3295
- 2SK3294-Z(AZ)
- 2SK3294-S
- 2SK3294(AZ)
- 2SK3294
- 2SK3293
- 2SK3292
- 2SK3291
- 2SK3290
- 2SK3289
- 2SK3288
- 2SK3287
- 2SK3285
- 2SK3284
- 2SK3283
- 2SK3280
- 2SK3279
- 2SK3278
2SK330数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
2021-6-242SK508G-K51-AE3-R
属性参数值 商品目录结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C时)50mA 漏源电压(Vdss)15V 类型N沟道 最大功率耗散(Ta=25°C)200mW
2020-11-122SK3313
2SK3313,全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R,全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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