位置:首页 > IC中文资料第6927页 > 2SK3296
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SK3296 | MOSFieldEffectTransistor Features ●4.5Vdriveavailable ●Lowon-stateresistance RDS(on)1=12mΩMAX.(VGS=10V,ID=18A) ●Lowgatecharge QG=30nCTYP.(ID=35A,VDD=16V,VGS=10V) ●Built-ingateprotectiondiode ●Surfacemountdeviceavailable | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
2SK3296 | MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •4.5Vdriveavailable •Lowon-stateresistance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
2SK3296 | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •4.5Vdriveavailable •Lowon-stateresistance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •4.5Vdriveavailable •Lowon-stateresistance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •4.5Vdriveavailable •Lowon-stateresistance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |
2SK3296产品属性
- 类型
描述
- 型号
2SK3296
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
2021+ |
6540 |
原装现货/欢迎来电咨询 |
||||
NEC |
1822+ |
SOT-263 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
2022+ |
TO263 |
5000 |
只做原装公司现货 |
|||
NEC |
06+ |
TO263 |
4485 |
原装现货!低价支持实单!贵了给接受价格! |
|||
NEC |
2048+ |
SOT-263 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
NEC |
08+ |
TO-263 |
4000 |
普通 |
|||
NEC |
0510+ |
TO263 |
107 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
11+ |
SOT263 |
1600 |
全新原装,价格优势 |
|||
NEC |
360000 |
原厂原装 |
1305 |
||||
NEC |
16+ |
SOT252 |
50 |
原装现货假一罚十 |
2SK3296规格书下载地址
2SK3296参数引脚图相关
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2SK3296数据表相关新闻
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
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属性参数值 商品目录结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C时)50mA 漏源电压(Vdss)15V 类型N沟道 最大功率耗散(Ta=25°C)200mW
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2020-3-28
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