位置:首页 > IC中文资料第5789页 > 2SD22
2SD22晶体管资料
2SD22别名:2SD22三极管、2SD22晶体管、2SD22晶体三极管
2SD22生产厂家:日本日电公司
2SD22制作材料:Ge-NPN
2SD22性质:低频或音频放大 (LF)_TR_输出极 (E)
2SD22封装形式:直插封装
2SD22极限工作电压:25V
2SD22最大电流允许值:0.3A
2SD22最大工作频率:<1MHZ或未知
2SD22引脚数:3
2SD22最大耗散功率:0.15W
2SD22放大倍数:β=97
2SD22图片代号:D-9
2SD22vtest:25
2SD22htest:999900
- 2SD22atest:.3
2SD22wtest:.15
2SD22代换 2SD22用什么型号代替:AC127,AC176,AC187,2N1302,2SD72,2SD352,3BX81B,
2SD22价格
参考价格:¥1.6736
型号:2SD2211T100Q 品牌:ROHM 备注:这里有2SD22多少钱,2024年最近7天走势,今日出价,今日竞价,2SD22批发/采购报价,2SD22行情走势销售排行榜,2SD22报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
80V/5ASwitchingApplications 80V/5ASwitchingApplications Features •Surfacemounttypedevicemakingthefollowingpossible. -Reductioninthenumberofmanufacturingprocesses for2SB1451/2SD2200-appliedequipment. -Highdensitysurfacemountapplications. -Smallsizeof2SB1451/2SD2200-appliedequipme | SANYOSanyo 三洋三洋电机株式会社 | |||
SwitchingApplications Features ●Surfacemounttypedevicemakingthefollowingpossible. ●Lowcollector-to-emittersaturationvoltage. ●Largecurrentcapacity. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
80V/7ASwitchingApplications 80V/7ASwitchingApplications Features ·Surfacemounttypedevicemakingthefollowingpossible. -Reductioninthenumberofmanufacturingprocessesfor2SB1452/2SD2201-appliedequipment. -Highdensitysurfacemountapplications. -Smallsizeof2SB1452/2SD2201-appliedequipment. | SANYOSanyo 三洋三洋电机株式会社 | |||
High-CurrentSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage. •Largecurrentcapacity. •Micalesspackagefacilitatingeasymounting. | SANYOSanyo 三洋三洋电机株式会社 | |||
High-CurrentSwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage. ·Largecurrentcapacity. ·Micalesspackagefacilitatingeasymounting. | SANYOSanyo 三洋三洋电机株式会社 | |||
NPNTRIPLEDIFFUSEDTYPE(HIGHPOWERSWITHCING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS) High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=1.5A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1.5A) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNEPITAXIALTYPE(MICROMOTORDRIVE,HAMMERDRIVE,SWITCHING,POWERAMPLIFIERAPPLICATIONS) MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
MicroMotorDrive,HammerDriveApplications MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
MicroMotorDrive,HammerDriveApplications MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNEpitaxialPlanarType Features ●Lowcollector-emittersaturationvoltageVCE(sat) ●Lowonresistanceron. ●HighforwardcurrenttransferratiohFE. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconNPNepitaxialplanertype(Forlow-voltageoutputamplification) SiliconNPNepitaxialplanertype Forlow-voltageoutputamplification Formuting ForDC-DCconverter ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LowONresistanceRon. ●HighfowardcurrenttransferratiohFE. | PanasonicPanasonic Corporation 松下松下电器 | |||
PowerTransistor(160V,1.5A)
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PowerTransistor Features Highbreakdownvoltage.(BVCEO=160V) Lowcollectoroutputcapacitance. (Typ.20pFatVCB=10V) Hightransitionfrequency.(fT=80MHZ) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
MediumPowerTransistor(Motor,Relaydrive)(60짹10V,2A) Features 1)Built-inzenerdiodebetweencollectorandbase. 2)StrongprotectionagainstreversesurgesduetoLloads. 3)Built-inresistorbetweenbaseandemitter. 4)Built-indamperdiode. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor(Motor,Relaydrive)(60V,10V,2A) Features 1)Built-inzenerdiodebetweencollectorandbase. 2)StrongprotectionagainstreversesurgesduetoLloads. 3)Built-inresistorbetweenbaseandemitter. 4)Built-indamperdiode. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconNPNEpitaxial,Darlington Application Lowfrequencypoweramplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxial,Darlington Application Lowfrequencypoweramplifier | HitachiHitachi, Ltd. 日立公司 | |||
SiliconNPNEpitaxial,Darlington Application Lowfrequencypoweramplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconNPNtriplediffusionplanartype(SiliconNPNtriplediffusionplanartype) SiliconNPNtriplediffusionplanartype Forpoweramplification ■Features ●HighcollectortobasevoltageVCBO ●Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipment. | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanartype(SiliconNPNtriplediffusionplanartype) SiliconNPNtriplediffusionplanartype Forpoweramplification ■Features ●HighcollectortobasevoltageVCBO ●Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipment. | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanertype SiliconNPNepitaxialplanartype Forgeneralamplification Complementaryto2SB1462 ■Features •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) •SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetape | PanasonicPanasonic Corporation 松下松下电器 | |||
SILICONNPNEPITAXIALPLANARTYPE SiliconNPNepitaxialplanartype Forgeneralamplification Complementaryto2SB1462J ■Features •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) •SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetape | PanasonicPanasonic Corporation 松下松下电器 | |||
ForGeneralAmplification SiliconNPNepitaxialplanartype Forgeneralamplification Complementaryto2SB1462L ■Features •HighforwardcurrenttransferratiohFE •Moldlead-lesstypepackage,allowingdownsizingandthinningoftheequipmentandautomaticinsertionthroughthetapepacking. | PanasonicPanasonic Corporation 松下松下电器 | |||
NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION)FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING The2SD2217isamoldpowertransistordevelopedforlow-frequencypoweramplifiersandlow-speedswitching.ThistransistorisidealfordirectdrivingfromtheICouttodrivers | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
DARLINGTONPOWERTRANSISTOR NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING The2SD2217isamoldpowertransistordevelopedforlowfrequency poweramplifiersandlow-speedswitching.This transistorisidealfordirectdrivingfromtheICouttodrive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
GeneralHigh-CurrentSwitchingApplications GeneralHigh-CurrentSwitchingApplications Features •Micalesspackagefacilitatingmounting. •Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Relaydrivers,high-speedinverters,converters. | SANYOSanyo 三洋三洋电机株式会社 | |||
30V/8AHigh-SpeedSwitchingApplications Features •Micalesspackagefacilitatingmounting. •Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Relaydrivers,high-speedinverters,converters,etc. | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNtriplediffusionplanartypeDarlington(Forlow-frequencyamplification) SiliconNPNtriplediffusionplanartypeDarlington Forlow-frequencyamplification ■Features ●Suitableforthedrivercircuitofamotor,aprinterhammerand likethat,sincethistransistorisdesignedforthehighforward currenttransferratiohFE ●Ashuntresistorisomittedf | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanartypeDarlington(Forpoweramplification) Forpoweramplification Complementaryto2SB1470 ■Features •Optimumfor120WHi-Fioutput •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1470 ·HighforwardcurrenttransferratiohFE ·LowsaturationvoltageVCE(sat) ·DARLINGTON APPLICATIONS ·Forpoweramplification | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1470 ·HighDCcurrentgain ·LowsaturationvoltageVCE(sat) ·DARLINGTON APPLICATIONS ·Forpoweramplification | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1470 ·HighDCcurrentgain ·LowsaturationvoltageVCE(sat) ·DARLINGTON APPLICATIONS ·Forpoweramplification | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
DriverApplications???? Features •Suitableforsetswhoseheightisrestricted. •HighDCcurrentgain. •LargecurrentcapacityandwideASO. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol. | SANYOSanyo 三洋三洋电机株式会社 | |||
DriverApplications???? DriverApplications Features •Suitableforsetswhoseheightisrestricted. •HighDCcurrentgain. •LargecurrentcapacityandwideASO. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol. | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNepitaxialplanertype(Forlow-frequencyamplification) Forlow-frequencyamplification Complementaryto2SB1473 ■Features ●HighcollectortoemittervoltageVCEOof120V. ●Optimumforlow-frequencydriveramplification. ●Allowingsupplywiththeradialtaping. | PanasonicPanasonic Corporation 松下松下电器 | |||
GeneralPurposeTransistor(50V,0.15A) Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Typ.VCE(sat)=0.3VatIC/IB=50mA/5mA) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERTRANSISTOR(25V,1.2V),GENERALPURPOSETRANSISTOR(50V,0.15A) MEDIUMPOWERTRANSISTOR(25V,1.2V) GENERALPURPOSETRANSISTOR(50V,0.15A) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
GeneralPurposeTransistor Features ●HighDCcurrentgain. ●Highemitter-basevoltage. ●Lowsaturationvoltage. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPN150mA50VMutingTransistors Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Typ.VCE(sat)=0.3VatIC/IB=50mA/5mA) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERTRANSISTOR(25V,1.2V),GENERALPURPOSETRANSISTOR(50V,0.15A) MEDIUMPOWERTRANSISTOR(25V,1.2V) GENERALPURPOSETRANSISTOR(50V,0.15A) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
GeneralPurposeTransistor(50V,0.15A) Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Typ.VCE(sat)=0.3VatIC/IB=50mA/5mA) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
NPNSILICONEPITAXIALTRANSISTORAUDIOFREQUENCYAMPLIFIER DESCRIPTION The2SD2228isdesignedforgeneral-purposeapplicatonsrequiringHighDCCurrentandLowCollectorSaturationVoltage. ThisissuitableforappliancesincludingVCRcamerasandheadphonestereos. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSiliconEpitaxia Features ●Highdccurrent. ●Lowcollectorsaturationvoltage. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SILICONTRANSISTOR NPNSILICONEPTAXIALTRANSISTOR AUDIOFREQUENCYAMPLIFIER | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONPOWERTRANSISTOR The2SD2230isanelementrealizingultralowVCE(sat).This transistorisidealformutingsuchasstereorecorders,VCRs, andTVs. FEATURES •LowVCE(sat): VCE(sat)1=33mVTYP.@IC=100mA,IB=10mA VCE(sat)2=150mVTYP.@IC=500mA,IB=20mA •HighhFEandhighcurrent | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSiliconEpitaxia Features ●HighhFEandhighcurrent. ●LowVCE(sat). | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPNSILICONEPITAXIALTRANSISTORFORLOW-FREQUENCYPOWERAMPLIFIERS The2SD2230isanelementrealizingultralowVCE(sat).Thistransistorisidealformutingsuchasstereorecorders,VCRs,andTVs. FEATURES •LowVCE(sat): VCE(sat)1=33mVTYP.@IC=100mA,IB=10mA VCE(sat)2=150mVTYP.@IC=500mA,IB=20mA •HighhFEandhighcurrent | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
TRANSISTORS TO-220classhighoutputpowerpackagewithPc60to100W. | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min.) •WideAreaofSafeOperation •ComplementtoType2SB1477 APPLICATIONS •Designedfordriverandgeneralpurposeapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain-:hFE=2000(Min)@IC=2A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max.)@IC=5A •ComplementtoType2SB1478 APPLICATIONS •Designedforpowerlinearandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TRANSISTORS TO-220classhighoutputpowerpackagewithPc60to100W. | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNepitaxialplanertype Forhighbreakdownvoltagelow-frequencyandlow-noiseamplification ■Features ●HighcollectortoemittervoltageVCEO. ●LownoisevoltageNV. ●SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking. | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanertype(Forhighbreakdownvoltagelow-noiseamplification) SiliconPNPepitaxialplanartype Forhighbreakdownvoltagelow-frequencyamplification Complementaryto2SD2240 ■Features •Highcollector-emittervoltage(Baseopen)VCEO •LownoisevoltageNV •SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthrought | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanertype Forhighbreakdownvoltagelow-frequencyandlow-noiseamplification ■Features ●HighcollectortoemittervoltageVCEO. ●LownoisevoltageNV. ●SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking. | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Fpackage •HighDCcurrentgain:hFE=2000(Min) •Lowsaturationvoltage •Complementtotype2SB1481 •DARLINGTON APPLICATIONS •Withswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNEPITAXIALTYPE(SWITCHINGAPPLICATIONS) SwitchingApplications •HighDCcurrentgain:hFE=2000(min) •Lowsaturationvoltage:VCE(sat)=1.5V(max) •Complementaryto2SB1481 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Fpackage •HighDCcurrentgain:hFE=2000(Min) •Lowsaturationvoltage •Complementtotype2SB1481 •DARLINGTON APPLICATIONS •Withswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNtriplediffusionplanartypeDarlington(Forpoweramplification) SiliconNPNtriplediffusionplanartypeDarlington Forpoweramplification ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingsupplywiththeradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNtriplediffusionplanartypeDarlington(Forpoweramplification) SiliconNPNtriplediffusionplanartypeDarlington Forpoweramplification ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingsupplywiththeradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNEpitaxial Application Lowfrequencyamplifier | HitachiHitachi, Ltd. 日立公司 |
2SD22产品属性
- 类型
描述
- 型号
2SD22
- 功能描述
NPN Transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HITACHI/日立 |
02+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
日立 |
22+ |
NA |
5500 |
||||
TOSHIBA |
2017+ |
TO-220F |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
HITACHI/日立 |
24+ |
TO3P |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
TOSHIBA |
22+23+ |
TO-220F |
48346 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
HIT |
08+(pbfree) |
TO-3P |
8866 |
||||
HITACHI/日立 |
23+ |
NA/ |
11318 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HITACHI/日立 |
TO-3P |
265209 |
假一罚十原包原标签常备现货! |
||||
TOSHIBA |
08+ |
208 |
百分百进口原装库存-价惠货真 |
||||
HITACHI |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
2SD22规格书下载地址
2SD22参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SD2223
- 2SD2222
- 2SD2220
- 2SD2219
- 2SD2218
- 2SD2217
- 2SD2216
- 2SD2215(A)
- 2SD2215
- 2SD2214
- 2SD2213
- 2SD2212
- 2SD2211A
- 2SD2211
- 2SD2210
- 2SD221
- 2SD220F
- 2SD2209
- 2SD2206
- 2SD2205
- 2SD2204
- 2SD2203
- 2SD2202
- 2SD2201
- 2SD2200
- 2SD220
- 2SD219F
- 2SD2199
- 2SD2198
- 2SD2197M
- 2SD2196
- 2SD2195
- 2SD2193
- 2SD2192
- 2SD2191
- 2SD219
- 2SD2188
- 2SD2185
- 2SD2184
- 2SD2183
- 2SD2182
- 2SD2181
- 2SD2180
- 2SD218
- 2SD2179
- 2SD2178
- 2SD2177
- 2SD2176
- 2SD2172
- 2SD2170
- 2SD217
- 2SD2167
- 2SD2166
- 2SD2165
2SD22数据表相关新闻
2SD667L-TO92NLB-C-TG_UTC代理商
2SD667L-TO92NLB-C-TG_UTC代理商
2023-3-172SD1898G-SOT89R-Q-TG_UTC代理商
2SD1898G-SOT89R-Q-TG_UTC代理商
2023-2-232SD1857L-TO92NLB-R-TG_UTC代理商
2SD1857L-TO92NLB-R-TG_UTC代理商
2023-2-162SD669AL-TO126K-D-TG_UTC代理商
2SD669AL-TO126K-D-TG_UTC代理商
2023-2-132SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SD1859TV2R中文资料
2SD1859TV2R中文资料
2019-2-15
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80