2SD22晶体管资料

  • 2SD22别名:2SD22三极管、2SD22晶体管、2SD22晶体三极管

  • 2SD22生产厂家:日本日电公司

  • 2SD22制作材料:Ge-NPN

  • 2SD22性质:低频或音频放大 (LF)_TR_输出极 (E)

  • 2SD22封装形式:直插封装

  • 2SD22极限工作电压:25V

  • 2SD22最大电流允许值:0.3A

  • 2SD22最大工作频率:<1MHZ或未知

  • 2SD22引脚数:3

  • 2SD22最大耗散功率:0.15W

  • 2SD22放大倍数:β=97

  • 2SD22图片代号:D-9

  • 2SD22vtest:25

  • 2SD22htest:999900

  • 2SD22atest:.3

  • 2SD22wtest:.15

  • 2SD22代换 2SD22用什么型号代替:AC127,AC176,AC187,2N1302,2SD72,2SD352,3BX81B,

2SD22价格

参考价格:¥1.6736

型号:2SD2211T100Q 品牌:ROHM 备注:这里有2SD22多少钱,2024年最近7天走势,今日出价,今日竞价,2SD22批发/采购报价,2SD22行情走势销售排行榜,2SD22报价。
型号 功能描述 生产厂家&企业 LOGO 操作

80V/5ASwitchingApplications

80V/5ASwitchingApplications Features •Surfacemounttypedevicemakingthefollowingpossible. -Reductioninthenumberofmanufacturingprocesses for2SB1451/2SD2200-appliedequipment. -Highdensitysurfacemountapplications. -Smallsizeof2SB1451/2SD2200-appliedequipme

SANYOSanyo

三洋三洋电机株式会社

SANYO

SwitchingApplications

Features ●Surfacemounttypedevicemakingthefollowingpossible. ●Lowcollector-to-emittersaturationvoltage. ●Largecurrentcapacity.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

80V/7ASwitchingApplications

80V/7ASwitchingApplications Features ·Surfacemounttypedevicemakingthefollowingpossible. -Reductioninthenumberofmanufacturingprocessesfor2SB1452/2SD2201-appliedequipment. -Highdensitysurfacemountapplications. -Smallsizeof2SB1452/2SD2201-appliedequipment.

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-CurrentSwitchingApplications

Features •Lowcollector-to-emittersaturationvoltage. •Largecurrentcapacity. •Micalesspackagefacilitatingeasymounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO

High-CurrentSwitchingApplications

Features ·Lowcollector-to-emittersaturationvoltage. ·Largecurrentcapacity. ·Micalesspackagefacilitatingeasymounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO

NPNTRIPLEDIFFUSEDTYPE(HIGHPOWERSWITHCING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=1.5A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1.5A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNEPITAXIALTYPE(MICROMOTORDRIVE,HAMMERDRIVE,SWITCHING,POWERAMPLIFIERAPPLICATIONS)

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

MicroMotorDrive,HammerDriveApplications

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

MicroMotorDrive,HammerDriveApplications

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNEpitaxialPlanarType

Features ●Lowcollector-emittersaturationvoltageVCE(sat) ●Lowonresistanceron. ●HighforwardcurrenttransferratiohFE.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconNPNepitaxialplanertype(Forlow-voltageoutputamplification)

SiliconNPNepitaxialplanertype Forlow-voltageoutputamplification Formuting ForDC-DCconverter ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LowONresistanceRon. ●HighfowardcurrenttransferratiohFE.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

PowerTransistor(160V,1.5A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PowerTransistor

Features Highbreakdownvoltage.(BVCEO=160V) Lowcollectoroutputcapacitance. (Typ.20pFatVCB=10V) Hightransitionfrequency.(fT=80MHZ)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

MediumPowerTransistor(Motor,Relaydrive)(60짹10V,2A)

Features 1)Built-inzenerdiodebetweencollectorandbase. 2)StrongprotectionagainstreversesurgesduetoLloads. 3)Built-inresistorbetweenbaseandemitter. 4)Built-indamperdiode.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor(Motor,Relaydrive)(60V,10V,2A)

Features 1)Built-inzenerdiodebetweencollectorandbase. 2)StrongprotectionagainstreversesurgesduetoLloads. 3)Built-inresistorbetweenbaseandemitter. 4)Built-indamperdiode.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconNPNEpitaxial,Darlington

Application Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxial,Darlington

Application Lowfrequencypoweramplifier

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconNPNEpitaxial,Darlington

Application Lowfrequencypoweramplifier

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNtriplediffusionplanartype(SiliconNPNtriplediffusionplanartype)

SiliconNPNtriplediffusionplanartype Forpoweramplification ■Features ●HighcollectortobasevoltageVCBO ●Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipment.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNtriplediffusionplanartype(SiliconNPNtriplediffusionplanartype)

SiliconNPNtriplediffusionplanartype Forpoweramplification ■Features ●HighcollectortobasevoltageVCBO ●Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipment.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNepitaxialplanertype

SiliconNPNepitaxialplanartype Forgeneralamplification Complementaryto2SB1462 ■Features •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) •SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetape

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SILICONNPNEPITAXIALPLANARTYPE

SiliconNPNepitaxialplanartype Forgeneralamplification Complementaryto2SB1462J ■Features •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) •SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetape

PanasonicPanasonic Corporation

松下松下电器

Panasonic

ForGeneralAmplification

SiliconNPNepitaxialplanartype Forgeneralamplification Complementaryto2SB1462L ■Features •HighforwardcurrenttransferratiohFE •Moldlead-lesstypepackage,allowingdownsizingandthinningoftheequipmentandautomaticinsertionthroughthetapepacking.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION)FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING The2SD2217isamoldpowertransistordevelopedforlow-frequencypoweramplifiersandlow-speedswitching.ThistransistorisidealfordirectdrivingfromtheICouttodrivers

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

DARLINGTONPOWERTRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING The2SD2217isamoldpowertransistordevelopedforlowfrequency poweramplifiersandlow-speedswitching.This transistorisidealfordirectdrivingfromtheICouttodrive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

GeneralHigh-CurrentSwitchingApplications

GeneralHigh-CurrentSwitchingApplications Features •Micalesspackagefacilitatingmounting. •Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Relaydrivers,high-speedinverters,converters.

SANYOSanyo

三洋三洋电机株式会社

SANYO

30V/8AHigh-SpeedSwitchingApplications

Features •Micalesspackagefacilitatingmounting. •Lowcollector-to-emittersaturationvoltage:VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •Largecurrentcapacity. Applications •Relaydrivers,high-speedinverters,converters,etc.

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNtriplediffusionplanartypeDarlington(Forlow-frequencyamplification)

SiliconNPNtriplediffusionplanartypeDarlington Forlow-frequencyamplification ■Features ●Suitableforthedrivercircuitofamotor,aprinterhammerand likethat,sincethistransistorisdesignedforthehighforward currenttransferratiohFE ●Ashuntresistorisomittedf

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNtriplediffusionplanartypeDarlington(Forpoweramplification)

Forpoweramplification Complementaryto2SB1470 ■Features •Optimumfor120WHi-Fioutput •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat)

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1470 ·HighforwardcurrenttransferratiohFE ·LowsaturationvoltageVCE(sat) ·DARLINGTON APPLICATIONS ·Forpoweramplification

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1470 ·HighDCcurrentgain ·LowsaturationvoltageVCE(sat) ·DARLINGTON APPLICATIONS ·Forpoweramplification

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SB1470 ·HighDCcurrentgain ·LowsaturationvoltageVCE(sat) ·DARLINGTON APPLICATIONS ·Forpoweramplification

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DriverApplications????

Features •Suitableforsetswhoseheightisrestricted. •HighDCcurrentgain. •LargecurrentcapacityandwideASO. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol.

SANYOSanyo

三洋三洋电机株式会社

SANYO

DriverApplications????

DriverApplications Features •Suitableforsetswhoseheightisrestricted. •HighDCcurrentgain. •LargecurrentcapacityandwideASO. Applications •Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol.

SANYOSanyo

三洋三洋电机株式会社

SANYO

SiliconNPNepitaxialplanertype(Forlow-frequencyamplification)

Forlow-frequencyamplification Complementaryto2SB1473 ■Features ●HighcollectortoemittervoltageVCEOof120V. ●Optimumforlow-frequencydriveramplification. ●Allowingsupplywiththeradialtaping.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

GeneralPurposeTransistor(50V,0.15A)

Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Typ.VCE(sat)=0.3VatIC/IB=50mA/5mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MEDIUMPOWERTRANSISTOR(25V,1.2V),GENERALPURPOSETRANSISTOR(50V,0.15A)

MEDIUMPOWERTRANSISTOR(25V,1.2V) GENERALPURPOSETRANSISTOR(50V,0.15A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor

Features ●HighDCcurrentgain. ●Highemitter-basevoltage. ●Lowsaturationvoltage.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPN150mA50VMutingTransistors

Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Typ.VCE(sat)=0.3VatIC/IB=50mA/5mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MEDIUMPOWERTRANSISTOR(25V,1.2V),GENERALPURPOSETRANSISTOR(50V,0.15A)

MEDIUMPOWERTRANSISTOR(25V,1.2V) GENERALPURPOSETRANSISTOR(50V,0.15A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor(50V,0.15A)

Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Typ.VCE(sat)=0.3VatIC/IB=50mA/5mA)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPNSILICONEPITAXIALTRANSISTORAUDIOFREQUENCYAMPLIFIER

DESCRIPTION The2SD2228isdesignedforgeneral-purposeapplicatonsrequiringHighDCCurrentandLowCollectorSaturationVoltage. ThisissuitableforappliancesincludingVCRcamerasandheadphonestereos.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSiliconEpitaxia

Features ●Highdccurrent. ●Lowcollectorsaturationvoltage.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SILICONTRANSISTOR

NPNSILICONEPTAXIALTRANSISTOR AUDIOFREQUENCYAMPLIFIER

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONPOWERTRANSISTOR

The2SD2230isanelementrealizingultralowVCE(sat).This transistorisidealformutingsuchasstereorecorders,VCRs, andTVs. FEATURES •LowVCE(sat): VCE(sat)1=33mVTYP.@IC=100mA,IB=10mA VCE(sat)2=150mVTYP.@IC=500mA,IB=20mA •HighhFEandhighcurrent

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSiliconEpitaxia

Features ●HighhFEandhighcurrent. ●LowVCE(sat).

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNSILICONEPITAXIALTRANSISTORFORLOW-FREQUENCYPOWERAMPLIFIERS

The2SD2230isanelementrealizingultralowVCE(sat).Thistransistorisidealformutingsuchasstereorecorders,VCRs,andTVs. FEATURES •LowVCE(sat): VCE(sat)1=33mVTYP.@IC=100mA,IB=10mA VCE(sat)2=150mVTYP.@IC=500mA,IB=20mA •HighhFEandhighcurrent

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

TRANSISTORS

TO-220classhighoutputpowerpackagewithPc60to100W.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min.) •WideAreaofSafeOperation •ComplementtoType2SB1477 APPLICATIONS •Designedfordriverandgeneralpurposeapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain-:hFE=2000(Min)@IC=2A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max.)@IC=5A •ComplementtoType2SB1478 APPLICATIONS •Designedforpowerlinearandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TRANSISTORS

TO-220classhighoutputpowerpackagewithPc60to100W.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconNPNepitaxialplanertype

Forhighbreakdownvoltagelow-frequencyandlow-noiseamplification ■Features ●HighcollectortoemittervoltageVCEO. ●LownoisevoltageNV. ●SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPepitaxialplanertype(Forhighbreakdownvoltagelow-noiseamplification)

SiliconPNPepitaxialplanartype Forhighbreakdownvoltagelow-frequencyamplification Complementaryto2SD2240 ■Features •Highcollector-emittervoltage(Baseopen)VCEO •LownoisevoltageNV •SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthrought

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNepitaxialplanertype

Forhighbreakdownvoltagelow-frequencyandlow-noiseamplification ■Features ●HighcollectortoemittervoltageVCEO. ●LownoisevoltageNV. ●SS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking.

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •HighDCcurrentgain:hFE=2000(Min) •Lowsaturationvoltage •Complementtotype2SB1481 •DARLINGTON APPLICATIONS •Withswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEPITAXIALTYPE(SWITCHINGAPPLICATIONS)

SwitchingApplications •HighDCcurrentgain:hFE=2000(min) •Lowsaturationvoltage:VCE(sat)=1.5V(max) •Complementaryto2SB1481

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •HighDCcurrentgain:hFE=2000(Min) •Lowsaturationvoltage •Complementtotype2SB1481 •DARLINGTON APPLICATIONS •Withswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNtriplediffusionplanartypeDarlington(Forpoweramplification)

SiliconNPNtriplediffusionplanartypeDarlington Forpoweramplification ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingsupplywiththeradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNtriplediffusionplanartypeDarlington(Forpoweramplification)

SiliconNPNtriplediffusionplanartypeDarlington Forpoweramplification ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingsupplywiththeradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconNPNEpitaxial

Application Lowfrequencyamplifier

HitachiHitachi, Ltd.

日立公司

Hitachi

2SD22产品属性

  • 类型

    描述

  • 型号

    2SD22

  • 功能描述

    NPN Transistor

更新时间:2024-4-26 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
02+
NA
880000
明嘉莱只做原装正品现货
日立
22+
NA
5500
TOSHIBA
2017+
TO-220F
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
HITACHI/日立
24+
TO3P
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
TOSHIBA
22+23+
TO-220F
48346
绝对原装正品现货,全新深圳原装进口现货
HIT
08+(pbfree)
TO-3P
8866
HITACHI/日立
23+
NA/
11318
优势代理渠道,原装正品,可全系列订货开增值税票
HITACHI/日立
TO-3P
265209
假一罚十原包原标签常备现货!
TOSHIBA
08+
208
百分百进口原装库存-价惠货真
HITACHI
NA
8560
一级代理 原装正品假一罚十价格优势长期供货

2SD22芯片相关品牌

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2SD22数据表相关新闻