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2SC60晶体管资料

  • 2SC60别名：2SC60三极管、2SC60晶体管、2SC60晶体三极管

  • 2SC60生产厂家：日本三洋公司

  • 2SC60制作材料：Ge-NPN

  • 2SC60性质：通用型 （Uni）

  • 2SC60封装形式：直插封装

  • 2SC60极限工作电压：20V

  • 2SC60最大电流允许值：0.02A

  • 2SC60最大工作频率：<1MHZ或未知

  • 2SC60引脚数：3

  • 2SC60最大耗散功率：0.1W

  • 2SC60放大倍数：

  • 2SC60图片代号：C-47

  • 2SC60vtest：20

  • 2SC60htest：999900

  • 2SC60atest：.02

  • 2SC60wtest：.1

  • 2SC60代换 2SC60用什么型号代替：AC127,ASY28,ASY29,2N1304,3BG1,

2SC60价格

参考价格：￥14.9765

型号：2SC6011 品牌：Sanken 备注：这里有2SC60多少钱，2024年最近7天走势，今日出价，今日竞价，2SC60批发/采购报价，2SC60行情走势销售排行榜，2SC60报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC6000

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6000

HighSpeedSwitchingApplicationsDC-DCConverterApplications

HighSpeedSwitchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=250to400(IC=2.5A) •Lowcollector-emittersaturation:VCE(sat)=0.18V(max) •Highspeedswitching:tf=13ns(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6010

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6010

SiliconNPNTripleDiffusedType

HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Highspeedswitching:tf=0.24μs(max)(IC=0.3A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6011

SiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=200V(Min) •GoodLinearityof(IFE •ComplementtoType2SA2151 APPLICATIONS •Designedforaudioandgeneralpurposeapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SC6011

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SC6011

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-: V(BR)CEO=200V(Min)-2SC6011 ​​​​​​​=200V(Min)-2SC6011A •GoodLinearityofhFE •ComplementtoType2SA2151/A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableope

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC6011

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

Allegro

Allegro MicroSystems

Allegro
2SC6011A

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

Allegro

Allegro MicroSystems

Allegro
2SC6011A

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-: V(BR)CEO=200V(Min)-2SC6011 ​​​​​​​=200V(Min)-2SC6011A •GoodLinearityofhFE •ComplementtoType2SA2151/A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableope

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC6011A

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SC6012

SiliconNPNtriplediffusionmesatype

SiliconNPNtriplediffusionmesatype Forhorizontaldeflectionoutput ■Features •Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer •High-speedswitching •Widesafeoerationarea

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC6013

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrivers,flash.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6014

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrivers,flash.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6015

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrivers,flash.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6016

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordrivers,flash.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6017

PNP/NPNEpitaxialPlanarSiliconTransistorsHigh-CurrentSwitchingApplications

High-CurrentSwitchingApplications Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. Applications •Relaydrivers,lampdrivers,motordrivers.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6017

iscSiliconNPNPowerTransistor

DESCRIPTION •Largecurrentcapacitance •High-speedswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •Complementaryto2SA2169 APPLICATIONS •relaydrivers,lampdrivers,motordrivers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC6017

BipolarTransistor(-)50V,(-)10A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA

Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching Applications •Relaydrivers,lampdrivers,motordrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC6017-E

BipolarTransistor(-)50V,(-)10A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA

Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching Applications •Relaydrivers,lampdrivers,motordrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC6017-TL-E

BipolarTransistor(-)50V,(-)10A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA

Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching Applications •Relaydrivers,lampdrivers,motordrivers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC6019

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motor

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6020

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordriv

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6021

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordriv

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6022

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordriv

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6023

NPNEpitaxialPlanarSiliconTransistorUHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14.5GHztyp(VCE=1V). fT=22GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=14dBtyp(f=2GHz).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6023

UHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14.5GHztyp(VCE=1V). fT=22GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=14dBtyp(f=2GHz).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6023-TR-E

UHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14.5GHztyp(VCE=1V). fT=22GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=14dBtyp(f=2GHz).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6024

UHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14GHztyp(VCE=1V).:fT=21GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=12.5dBtyp(f=2GHz). •Ultraminiatureandthinflatleadlesspack

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6025

NPNEpitaxialPlanarSiliconTransistorUHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14GHztyp(VCE=1V). :fT=21GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=12.5dBtyp(f=2GHz).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6026

SiliconNPNEpitaxialType(PCTProcess)General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent :VCEO=50V,IC=100mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120~400 •Complementaryto2SA2154 •Lead(Pb)free

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6026CT

GeneralPurposeAmplifierApplications

GeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=100mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154CT

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6026MFV

General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6026MFV

General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6026MFV

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6026MFV-GR

General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6026MFV-Y

General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6033

TOSHIBATransistorSiliconNPNEpitaxialType

High-SpeedSwtchingApplications DC-DCConverterApplications StorobeFlashApplications •HighDCcurrentgain:hFE=250to400(IC=0.3A) •Lowcollector-emittersaturation:VCE(sat)=0.18V(max) •High-speedswitching:tf=38ns(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6033

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6034

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6034

SiliconNPNTripleDiffusedType

High-Speed,High-VoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •High-speedswitching:tf=0.24μs(max)(IC=0.3A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6036

SiliconNPNepitaxialplanartype

Forgeneralamplification Complementaryto2SA2162 Features Lowcollector-emittersaturationvoltageVCE(sat) SSS-Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC6037J

SiliconNPNepitaxialplanartype

Features Lowcollector-emittersaturationvoltageVCE(sat) SS-Minitypepackage,allowingdownsizingoftheequipmentandautomatic insertionthroughthetapepacking

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC6040

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6040

High-SpeedandHigh-VoltageSwitchingApplicationsSwitchingRegulatorApplicationsDC-DCConverterApplications

High-SpeedandHigh-VoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •High-speedswitching:tf=0.2µs(max)(IC=0.3A) •Highbreakdownvoltage:VCES=800V,VCEO=410V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6041

TOSHIBATransistorSiliconNPNTriple-DiffusedMesaType

HorizontalDeflectionOutputforHDTV,DigitalTV,ProjectionTV. ●Highvoltage:VCBO=1700V ●Lowsaturationvoltage:VCE(sat)=1.5V(max) ●Highspeed:tf=0.15µs(typ.) ●Collectormetal(fin)isfullycoveredwithmoldresin.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6042

SiliconNPNTripleDiffusedType

High-Speed,High-VoltageSwitchingApplications. SwitchingRegulatorApplications. DC-DCConverterApplications. •High-speedswitching:tf=0.2μs(max)(IC=0.3A) •Highbreakdownvoltage:VCES=800V,VCEO=375V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6042

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6043

BipolarTransistor

Features •AdoptionofMBITprocess •Lowcollectortoemittersaturationvoltage •Highcurrentcapacitance •High-speedswitching Applications •Voltageregulators,relaydrivers,lampdrivers,electricalequipment

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC6043

NPNEpitaxialPlanarSiliconTransistorsHigh-CurrentSwitchingApplications

High-CurrentSwitchingApplications Features •AdoptionofMBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. Applications •Voltageregulators,relaydrivers,lampdrivers,electricalequipment.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC6043-AE

BipolarTransistor

Features •AdoptionofMBITprocess •Lowcollectortoemittersaturationvoltage •Highcurrentcapacitance •High-speedswitching Applications •Voltageregulators,relaydrivers,lampdrivers,electricalequipment

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC6044

NPNEpitaxialPlanarSiliconTransistorsHigh-CurrentSwitchingApplications

High-CurrentSwitchingApplications Features •AdoptionofMBITprocess. •Lowcollector-to-emittersaturationvoltage. •Highcurrentcapacity. •High-speedswitching. Applications •Voltageregulators,relaydrivers,lampdrivers,electricalequipment.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC605

NPNSILICONTRANSISTOR

NPNSILICONTRANSISTOR VHFTVTuner MICRODISK The2SC605and2SC606arespecificallydesignedforVHFMixerandVHFRFamplifierapplications. The2SC606featurehighpowergain,lownoiseandexcellentforwardAGCcharacteristicsinMICRODISKpackagedesignedtorealizeeasyandeconomicalmo

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SC6052

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6053

FORHIGHCURRENTDRIVEAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION 2SC6053isaminipackageresinsealedsiliconNPNepitaxialtypetransistordesignedwithhighcollectorcurrent,smallVCE(sat). FEATURES •Superminipackageforeasymounting •HighcollectorcurrentIc=650mA •Lowcollectortoemittersaturationvoltage VCE(sat)=0.5Vma

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

ISAHAYA
2SC606

NPNSILICONTRANSISTOR

NPNSILICONTRANSISTOR VHFTVTuner MICRODISK The2SC605and2SC606arespecificallydesignedforVHFMixerandVHFRFamplifierapplications. The2SC606featurehighpowergain,lownoiseandexcellentforwardAGCcharacteristicsinMICRODISKpackagedesignedtorealizeeasyandeconomicalmo

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SC6060

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6061

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6061

SiliconNPNEpitaxialType

High-SpeedSwitchingApplications DC-DCConverterApplications •High-DCcurrentgain:hFE=120to300(IC=0.1A) •Low-collector-emittersaturation:VCE(sat)=0.14V(max) •High-speedswitching:tf=0.2μs(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC6062

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC60产品属性

  • 类型

    描述

  • 型号

    2SC60

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    High Speed Switching Applications DC-DC Converter Applications

2SC60供应商更多...

更新时间：2024-4-26 13:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳兆威电子有限公司
2SC6013
ON
23+
SOT-89
63000
原装正品现货
询价
柒号芯城电子商务(深圳)有限公司
2SC6015-TD-E
SANYO
2023+
SOT-89
700000
柒号芯城跟原厂的距离只有0.07公分
询价
深圳市环球伟业电子有限公司
2SC6015-TD-E
SANYO/Sanyo/三洋/三洋电机株式
21+
SOT-89
2000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市航润创能电子集团有限公司
2SC6015-TD-E
SANYO
21+
SOT-89
2000
原装现货假一赔十
询价
深圳市维尔达电子有限公司
2SC6017
SANYO
2023+
TO252
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市百视威讯电子科技有限公司
2SC6015-TD-E
23+
N/A
85400
正品授权货源可靠
询价
贸泽芯城（深圳）电子科技有限公司
2SC6012
PANASONIC/松下
2021+
TO3PF
28888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
瀚佳科技(深圳)有限公司
2SC6017
SANYO
21+
TO252
35200
一级代理/放心采购
询价
深圳市纳艾斯科技有限公司
2SC6015-TD-E
SANYO
2020+
SOT-89
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市纳立科技有限公司
2SC6014-TD-E
三年内
1983
纳立只做原装正品13590203865
询价

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2SC60规格书下载地址

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