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2SC4226晶体管资料
2SC4226别名:2SC4226三极管、2SC4226晶体管、2SC4226晶体三极管
2SC4226生产厂家:日本日电公司
2SC4226制作材料:Si-NPN
2SC4226性质:表面帖装型 (SMD)_甚高频 (VHF)_超高频/特高频
2SC4226封装形式:贴片封装
2SC4226极限工作电压:12V
2SC4226最大电流允许值:0.1A
2SC4226最大工作频率:4.5GHZ
2SC4226引脚数:3
2SC4226最大耗散功率:
2SC4226放大倍数:
2SC4226图片代号:H-15
2SC4226vtest:12
2SC4226htest:4500000000
- 2SC4226atest:.1
2SC4226wtest:0
2SC4226代换 2SC4226用什么型号代替:BFR106,2SC3775,
2SC4226价格
参考价格:¥0.3100
型号:2SC4226 品牌:RENESAS 备注:这里有2SC4226多少钱,2024年最近7天走势,今日出价,今日竞价,2SC4226批发/采购报价,2SC4226行情走势销售排行榜,2SC4226报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SC4226 | HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD DESCRIPTION The2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier. Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbeenappliedsmallminimoldpackage. FEATURES •LowNoise NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
2SC4226 | NPNSiliconEpitaxialTransistor Features ●Lownoiseandhighgain. NF=1.2dBTyp.@VCE=3V,IC=7mA,f=1.0GHz ●Highgain. |S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
2SC4226 | NPNSiliconPlasticEncapsulatedTransistor FEATURE •The2SC4226isaLowsupplyvoltagetransistor designedforVHF,UHFlownoiseamplifier •Suitableforahighdensitysurfacemountassembly sincethetransistorhasbeenapplied smallminimoldpackage | SECOS SeCoS Halbleitertechnologie GmbH | ||
2SC4226 | NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
2SC4226 | NPNSiliconEpitaxialPlanarTransistor FEATURES ●Lownoise. ●Highgain. ●Powerdissipation.(PC=150mW) APPLICATIONS ●Highfrequencylownoiseamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
2SC4226 | NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | ||
2SC4226 | iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorCurren-IC=0.1A •LowCollectorPower—Pc=0.1W WithSOT-323Package •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforbroadbandlownoiseamplifier; widebandlownoiseamplifie | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
2SC4226 | SiliconTransistor NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
2SC4226 | SiliconTransistor NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
2SC4226 | NPNSiliconEpitaxialPlanarTransistor 文件:258.519 Kbytes Page:3 Pages | SECOS SeCoS Halbleitertechnologie GmbH | ||
2SC4226 | 2SC4226isanultra-highfrequencylow-noisetransistor,usingplanarNPNsiliconoutside 文件:685.71 Kbytes Page:5 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor FEATURES Lownoise. Highgain. Powerdissipation.(PC=150mW) APPLICATIONS Highfrequencylownoiseamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor 文件:258.519 Kbytes Page:3 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
NPNSiliconEpitaxialPlanarTransistor 文件:258.62 Kbytes Page:3 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 4.5GHZ SC70-3 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Laboratories | |||
封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 4.5GHZ SOT323 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Laboratories |
2SC4226产品属性
- 类型
描述
- 型号
2SC4226
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS |
23+ |
SOT-323 |
160000 |
R25全新RENESAS正品假一罚十 |
|||
NEC |
21+ |
SOT-323 |
30000 |
代理全新原装现货,价格优势 |
|||
NEC国产 |
2020+ |
SOT-23 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
NEC |
2017+ |
SOT-323 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
RENESAS/瑞萨 |
20+ |
SOT-323 |
825000 |
现货很近!原厂很远!只做原装 |
|||
NEC |
2008++ |
SC-70 |
9200 |
新进库存/原装 |
|||
NEC |
20+/21+ |
SOT323/ |
9500 |
全新原装进口现货 |
|||
NEC |
23+ |
SOT323 |
31000 |
全新原装 |
|||
MAXIM/美信 |
22+ |
BGA |
10000 |
公司原装现货,欢迎咨询 |
|||
NEC |
23+ |
SOT-323 |
200000 |
有挂就有货,只做原装免费送样-可BOM配单 |
2SC4226规格书下载地址
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2SC4226数据表相关新闻
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只做原装假一赔十
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