2SC4226晶体管资料

  • 2SC4226别名:2SC4226三极管、2SC4226晶体管、2SC4226晶体三极管

  • 2SC4226生产厂家:日本日电公司

  • 2SC4226制作材料:Si-NPN

  • 2SC4226性质:表面帖装型 (SMD)_甚高频 (VHF)_超高频/特高频

  • 2SC4226封装形式:贴片封装

  • 2SC4226极限工作电压:12V

  • 2SC4226最大电流允许值:0.1A

  • 2SC4226最大工作频率:4.5GHZ

  • 2SC4226引脚数:3

  • 2SC4226最大耗散功率

  • 2SC4226放大倍数

  • 2SC4226图片代号:H-15

  • 2SC4226vtest:12

  • 2SC4226htest:4500000000

  • 2SC4226atest:.1

  • 2SC4226wtest:0

  • 2SC4226代换 2SC4226用什么型号代替:BFR106,2SC3775,

2SC4226价格

参考价格:¥0.3100

型号:2SC4226 品牌:RENESAS 备注:这里有2SC4226多少钱,2024年最近7天走势,今日出价,今日竞价,2SC4226批发/采购报价,2SC4226行情走势销售排行榜,2SC4226报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC4226

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD

DESCRIPTION The2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier. Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbeenappliedsmallminimoldpackage. FEATURES •LowNoise NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC4226

NPNSiliconEpitaxialTransistor

Features ●Lownoiseandhighgain. NF=1.2dBTyp.@VCE=3V,IC=7mA,f=1.0GHz ●Highgain. |S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SC4226

NPNSiliconPlasticEncapsulatedTransistor

FEATURE •The2SC4226isaLowsupplyvoltagetransistor designedforVHF,UHFlownoiseamplifier •Suitableforahighdensitysurfacemountassembly sincethetransistorhasbeenapplied smallminimoldpackage

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC4226

NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold

NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC4226

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Lownoise. ●Highgain. ●Powerdissipation.(PC=150mW) APPLICATIONS ●Highfrequencylownoiseamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SC4226

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2SC4226

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorCurren-IC=0.1A •LowCollectorPower—Pc=0.1W WithSOT-323Package •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforbroadbandlownoiseamplifier; widebandlownoiseamplifie

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC4226

SiliconTransistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC4226

SiliconTransistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC4226

NPNSiliconEpitaxialPlanarTransistor

文件:258.519 Kbytes Page:3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC4226

2SC4226isanultra-highfrequencylow-noisetransistor,usingplanarNPNsiliconoutside

文件:685.71 Kbytes Page:5 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold

NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold

NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSiliconEpitaxialPlanarTransistor

FEATURES Lownoise. Highgain. Powerdissipation.(PC=150mW) APPLICATIONS Highfrequencylownoiseamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

NPNSiliconEpitaxialPlanarTransistor

文件:258.519 Kbytes Page:3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNSiliconEpitaxialPlanarTransistor

文件:258.62 Kbytes Page:3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 4.5GHZ SC70-3 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Laboratories

CEL

封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 4.5GHZ SOT323 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Laboratories

CEL

2SC4226产品属性

  • 类型

    描述

  • 型号

    2SC4226

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2024-3-19 16:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
23+
SOT-323
160000
R25全新RENESAS正品假一罚十
NEC
21+
SOT-323
30000
代理全新原装现货,价格优势
NEC国产
2020+
SOT-23
16800
绝对原装进口现货,假一赔十,价格优势!?
NEC
2017+
SOT-323
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
RENESAS/瑞萨
20+
SOT-323
825000
现货很近!原厂很远!只做原装
NEC
2008++
SC-70
9200
新进库存/原装
NEC
20+/21+
SOT323/
9500
全新原装进口现货
NEC
23+
SOT323
31000
全新原装
MAXIM/美信
22+
BGA
10000
公司原装现货,欢迎咨询
NEC
23+
SOT-323
200000
有挂就有货,只做原装免费送样-可BOM配单

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