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2SC3357晶体管资料
2SC3357别名:2SC3357三极管、2SC3357晶体管、2SC3357晶体三极管
2SC3357生产厂家:日本日电公司
2SC3357制作材料:Si-NPN
2SC3357性质:超高频/特高频 (UHF)
2SC3357封装形式:直插封装
2SC3357极限工作电压:20V
2SC3357最大电流允许值:0.1A
2SC3357最大工作频率:6.5GHZ
2SC3357引脚数:3
2SC3357最大耗散功率:
2SC3357放大倍数:
2SC3357图片代号:H-100
2SC3357vtest:20
2SC3357htest:6500000000
- 2SC3357atest:.1
2SC3357wtest:0
2SC3357代换 2SC3357用什么型号代替:2SC3607,
2SC3357价格
参考价格:¥3.1677
型号:2SC3357-T1-A 品牌:CEL 备注:这里有2SC3357多少钱,2024年最近7天走势,今日出价,今日竞价,2SC3357批发/采购报价,2SC3357行情走势销售排行榜,2SC3357报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SC3357 | NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD DESCRIPTION The2SC3357isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband.Ithaslargedynamicrangeandgoodcurrentcharacteristic. FEATURES •LowNoiseandHighGain NF=1.1dBTYP.,Ga=8.0dBTYP.@VCE=10V,IC=7mA,f=1.0GHz N | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
2SC3357 | NPNSiliconRFTransistor Features ●LowNoiseandHighGain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1.0GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1.0GHz ●Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
2SC3357 | iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseandHighGain NF=1.1dBTYP.,Ga=8.0dBTYP. @VCE=10V,IC=7mA,f=1.0GHz NF=1.8dBTYP.,Ga=9.0dBTYP. @VCE=10V,IC=40mA,f=1.0GHz APPLICATIONS •DesignedforlownoiseamplifieratVHF,UHFandCATVband. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
2SC3357 | NPNTransistors ■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
2SC3357 | NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION3-PINPOWERMINIMOLD FEATURES •Lownoiseandhighgain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1GHz •Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz •LargePtot:Ptot=1.2W(Mountedon16cm2× | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
2SC3357 | NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | ||
2SC3357 | SiliconNPNtransistorinaSOT-89PlasticPackage Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features Lownoiseandhighgain,largePCinsmallpackage. Applications lownoiseamplifieratVHF,UHFandCATVbandapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
2SC3357 | SOT-89-3LPlastic-EncapsulateTransistors Features Lownoiseandhighgain Highpowergain LargePtot Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNTransistors ■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
NPNTransistors ■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPNTransistors ■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
NPNTransistors ■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPNTransistors ■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPNTransistors ■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION3-PINPOWERMINIMOLD FEATURES •Lownoiseandhighgain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1GHz •Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz •LargePtot:Ptot=1.2W(Mountedon16cm2× | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD DESCRIPTION The2SC3357isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband.Ithaslargedynamicrangeandgoodcurrentcharacteristic. FEATURES •LowNoiseandHighGain NF=1.1dBTYP.,Ga=8.0dBTYP.@VCE=10V,IC=7mA,f=1.0GHz N | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNEPITAXIALSILICONRFTRANSISTOR 文件:218.19 Kbytes Page:10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION 文件:216.06 Kbytes Page:6 Pages | CEL California Eastern Laboratories | |||
RF&Microwavedevice 文件:137.58 Kbytes Page:2 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION 文件:216.06 Kbytes Page:6 Pages | CEL California Eastern Laboratories | |||
封装/外壳:TO-243AA 包装:托盘 描述:RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Laboratories | |||
封装/外壳:TO-243AA 包装:带 描述:RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Laboratories |
2SC3357产品属性
- 类型
描述
- 型号
2SC3357
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
瑞萨 |
1950+ |
SOT-89 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
TECH PUBLIC(台舟) |
24+ |
SOT-89-3 |
5000 |
诚信服务,绝对原装原盘。 |
|||
NEC |
20+/21+ |
SOT89/ |
9500 |
全新原装进口现货 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
23+ |
SOT-89 |
9000 |
全新原装 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
21+ |
TO-3PL |
5500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
RENESAS/瑞萨 |
23+ |
SOT89 |
33500 |
全新进口原装现货,假一罚十 |
|||
NEC |
21+ |
SOT-89 |
7453 |
原装现货假一赔十 |
|||
NEC |
2017+ |
SOT89 |
18700 |
2SC3357规格书下载地址
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2SC3357数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
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DdatasheetPDF页码索引
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