2SC181晶体管资料

  • 2SC181别名:2SC181三极管、2SC181晶体管、2SC181晶体三极管

  • 2SC181生产厂家:日本日立公司

  • 2SC181制作材料:Ge-NPN

  • 2SC181性质:开关管 (S)

  • 2SC181封装形式:直插封装

  • 2SC181极限工作电压:25V

  • 2SC181最大电流允许值:0.4A

  • 2SC181最大工作频率:10MHZ

  • 2SC181引脚数:3

  • 2SC181最大耗散功率:0.12W

  • 2SC181放大倍数

  • 2SC181图片代号:C-47

  • 2SC181vtest:25

  • 2SC181htest:10000000

  • 2SC181atest:.4

  • 2SC181wtest:.12

  • 2SC181代换 2SC181用什么型号代替:AC176,AC187,ASY73,ASY74,ASY75,2N1304,3BX81B,

型号 功能描述 生产厂家&企业 LOGO 操作

SPECIFICATIONTRANSISTORS,DIODES

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconNPNEpitaxailType(forAudioFrequencyGeneralPurposeAmplifierApplications)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent: VCEO=50V(min), IC=150mA(max) •ExcellenthFElinearity:hFE(2)=100(typ.) atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNTransistor

Features ●Powerdissipation

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNTypePlasticEncapsulateTransistors

FEATURES •PowerDissipation PCM:0.4W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description DesignedforuseindriverstageofAFamplifiergeneralpurposeamplification.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

NPNEPITAXIALPLANARTRANSISTOR

Description The2SC1815isdesignedforuseindriverstageofAFamplifiergeneralpurposeamplification.

TGS

Tiger Electronic Co.,Ltd

TGS

NPNSILICONTRANSISTOR

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Powerdissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconEpitaxialPlanarTransistor

FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity: hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplicati

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SiliconEpitaxialPlanarTransistor

FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity:hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencyg

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

iscSiliconNPNTransistor

DESCRIPTION •HighVoltageandHighCurrent Vceo=50V(Min.),Ic=150mA(Max) •ExcellenthFELinearity •LowNoise •ComplementtoType2SA1015(O,Y,GRclass) APPLICATIONS •AudiofrequencygeneralpurposeamplifierApplications •Driverstageamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEpitaxialPlanarTansistor

NPNEpitaxialPlanarTansistor

FCI

Amphenol ICC

FCI

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Powerdissipation

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Highvoltageandhighcurrent,excellenthFElinearity,lownoise,complementarypairwith2SA1015. Applications Audiofrequencygeneralpurpose,driverstageamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

NPNTransistors

Features ●Powerdissipation

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent: VCEO=50V(min), IC=150mA(max) •ExcellenthFElinearity:hFE(2)=100(typ.) atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking:

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description DesignedforuseindriverstageofAFamplifiergeneralpurposeamplification.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

NPNSILICONTRANSISTOR

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

SiliconNPNEpitaxailType(forAudioFrequencyGeneralPurposeAmplifierApplications)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNTypePlasticEncapsulateTransistors

FEATURES •PowerDissipation PCM:0.4W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking:

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistors

Features ●Powerdissipation

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNTypePlasticEncapsulateTransistors

FEATURES •PowerDissipation PCM:0.2W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

TRANSISTOR(AUDIOFREQUENCYVOLTAGE,LOWNOISEAMPLIFIERAPPLICATIONS)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNTransistors

Features ●Powerdissipation

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

NPNEPITAXIALSILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR *Complementto2SA1015 *CollectorCurrent:Ic=150mA

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

SOT-23Plastic-EncapsulateTransistors(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation

TGS

Tiger Electronic Co.,Ltd

TGS

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking:

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistorEpitaxialPlanarTransistor

Description The2SC1815WisdesignedforuseindriverstageofAFamplifierandgeneralpurposeamplificaion.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking:

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

SPECIFICATIONTRANSISTORSS,DIODES

SPECIFICATIONTRANSISTORSS/DIODES

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

RPPOWERTRANSISTOR

2SC1817isdesignedforHFandVHFPowerAmplifierApplictions. Mostusefulfor12-WattSSBcitizensBandTransceverOutputStage.

SonySONY

索尼

Sony

SiNPNTripleDiffusedPlanar

SiNPNTripleDiffusedPlanar ColorTVChromaOutput Features •HighVCEO •Largecollectordissipation

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·HighVCEO ·LargePC APPLICATIONS ·Foruseinline-operatedcolorTVchromaoutputcircuits.

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·HighVCEO ·LargePC APPLICATIONS ·Foruseinline-operatedcolorTVchromaoutputcircuits.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEPITAXIALSILICONTRANSISTOR

文件:99.39 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

NPNEPITAXIALSILICONTRANSISTOR

文件:93.88 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

AudioFrequencyGeneralPurposeAmplifierApplications

文件:279.37 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

iscSiliconNPNTransistor

文件:235.34 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNTransistors

文件:987.55 Kbytes Page:2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

COLORTELEVISIONN1PSChassis

文件:2.69679 Mbytes Page:54 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

COLORTELEVISION

文件:2.69679 Mbytes Page:54 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

COLOURTELEVISIONC9PJChassis

文件:6.49885 Mbytes Page:126 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

LowFrequencyAmplifierNPNEpitaxialSiliconTransistor

文件:891.61 Kbytes Page:7 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER

LowLevelandGeneralPurposeAmplifiers

文件:84.74 Kbytes Page:1 Pages

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSCNPNTRANSISTOR

文件:215.31 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

AudioFrequencyVoltageAmplifierApplicationsLowNoiseAmplifierApplications

文件:142.85 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSCNPNTRANSISTOR

文件:165.79 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2SC181产品属性

  • 类型

    描述

  • 型号

    2SC181

  • 功能描述

    SPECIFICATION TRANSISTORS,DIODES

更新时间:2024-5-7 10:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/ONSemiconductor/安森
2008++
SOT-23
57200
新进库存/原装
UTC/友顺
19+
TO-92
13500
一级代理商,原装正品
23+
N/A
13150
正品授权货源可靠
UTC
23+
TO-92
16011
现货库存,实单请给接受价格
TOS
23+
TO
20000
正品原装货价格低qq:2987726803
UTC/友顺
22+
TO-92
40256
本公司只做原装进口现货
UTC/友顺
24+
TO-92
9000
只做原装正品 有挂有货 假一赔十
UTC/友顺
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
CJ/TOSHIBA
2048+
SOT-23
9852
只做原装正品现货!或订货假一赔十!
TGS
2006
SOT23
1605
进口原装-真实库存-价实

2SC181芯片相关品牌

  • Actel
  • bel
  • CALIBER
  • EMERSON-NETWORKPOWER
  • KERSEMI
  • NJRC
  • PANDUIT
  • RichTek
  • SCHNEIDER
  • SECOS
  • TI
  • YAGEO

2SC181数据表相关新闻