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2SC181晶体管资料
2SC181别名:2SC181三极管、2SC181晶体管、2SC181晶体三极管
2SC181生产厂家:日本日立公司
2SC181制作材料:Ge-NPN
2SC181性质:开关管 (S)
2SC181封装形式:直插封装
2SC181极限工作电压:25V
2SC181最大电流允许值:0.4A
2SC181最大工作频率:10MHZ
2SC181引脚数:3
2SC181最大耗散功率:0.12W
2SC181放大倍数:
2SC181图片代号:C-47
2SC181vtest:25
2SC181htest:10000000
- 2SC181atest:.4
2SC181wtest:.12
2SC181代换 2SC181用什么型号代替:AC176,AC187,ASY73,ASY74,ASY75,2N1304,3BX81B,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SPECIFICATIONTRANSISTORS,DIODES ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNEpitaxailType(forAudioFrequencyGeneralPurposeAmplifierApplications) AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconNPNEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent: VCEO=50V(min), IC=150mA(max) •ExcellenthFElinearity:hFE(2)=100(typ.) atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNTransistor Features ●Powerdissipation | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPNTypePlasticEncapsulateTransistors FEATURES •PowerDissipation PCM:0.4W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V | SECOS SeCoS Halbleitertechnologie GmbH | |||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description DesignedforuseindriverstageofAFamplifiergeneralpurposeamplification. | DCCOMDc Components 直流元件直流元件有限公司 | |||
NPNEPITAXIALPLANARTRANSISTOR Description The2SC1815isdesignedforuseindriverstageofAFamplifiergeneralpurposeamplification. | TGS Tiger Electronic Co.,Ltd | |||
NPNSILICONTRANSISTOR
| MICRO-ELECTRONICS Micro Electronics | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SiliconEpitaxialPlanarTransistor FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity: hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplicati | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
SiliconEpitaxialPlanarTransistor FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity:hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencyg | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscSiliconNPNTransistor DESCRIPTION •HighVoltageandHighCurrent Vceo=50V(Min.),Ic=150mA(Max) •ExcellenthFELinearity •LowNoise •ComplementtoType2SA1015(O,Y,GRclass) APPLICATIONS •AudiofrequencygeneralpurposeamplifierApplications •Driverstageamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNEpitaxialPlanarTansistor NPNEpitaxialPlanarTansistor | FCI Amphenol ICC | |||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Powerdissipation | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
SiliconNPNtransistorinaTO-92PlasticPackage Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Highvoltageandhighcurrent,excellenthFElinearity,lownoise,complementarypairwith2SA1015. Applications Audiofrequencygeneralpurpose,driverstageamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
NPNTransistors Features ●Powerdissipation | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
SILICONNPNTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SiliconNPNEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent: VCEO=50V(min), IC=150mA(max) •ExcellenthFElinearity:hFE(2)=100(typ.) atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SILICONNPNTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPNSiliconEpitaxialTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking: | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description DesignedforuseindriverstageofAFamplifiergeneralpurposeamplification. | DCCOMDc Components 直流元件直流元件有限公司 | |||
NPNSILICONTRANSISTOR
| MICRO-ELECTRONICS Micro Electronics | |||
SiliconNPNEpitaxailType(forAudioFrequencyGeneralPurposeAmplifierApplications) AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNTypePlasticEncapsulateTransistors FEATURES •PowerDissipation PCM:0.4W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V | SECOS SeCoS Halbleitertechnologie GmbH | |||
SILICONNPNTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPNSiliconEpitaxialTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking: | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPNTransistors Features ●Powerdissipation | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
NPNTypePlasticEncapsulateTransistors FEATURES •PowerDissipation PCM:0.2W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V | SECOS SeCoS Halbleitertechnologie GmbH | |||
TRANSISTOR(AUDIOFREQUENCYVOLTAGE,LOWNOISEAMPLIFIERAPPLICATIONS) AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNTransistors Features ●Powerdissipation | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
NPNEPITAXIALSILICONTRANSISTOR NPNEPITAXIALSILICONTRANSISTOR *Complementto2SA1015 *CollectorCurrent:Ic=150mA | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
SOT-23Plastic-EncapsulateTransistors(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation | TGS Tiger Electronic Co.,Ltd | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SILICONNPNTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPNSiliconEpitaxialTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking: | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPNTransistorEpitaxialPlanarTransistor Description The2SC1815WisdesignedforuseindriverstageofAFamplifierandgeneralpurposeamplificaion. | SECOS SeCoS Halbleitertechnologie GmbH | |||
NPNSiliconEpitaxialTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking: | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SILICONNPNTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SPECIFICATIONTRANSISTORSS,DIODES SPECIFICATIONTRANSISTORSS/DIODES | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
RPPOWERTRANSISTOR 2SC1817isdesignedforHFandVHFPowerAmplifierApplictions. Mostusefulfor12-WattSSBcitizensBandTransceverOutputStage. | SonySONY 索尼 | |||
SiNPNTripleDiffusedPlanar SiNPNTripleDiffusedPlanar ColorTVChromaOutput Features •HighVCEO •Largecollectordissipation | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·HighVCEO ·LargePC APPLICATIONS ·Foruseinline-operatedcolorTVchromaoutputcircuits. | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·HighVCEO ·LargePC APPLICATIONS ·Foruseinline-operatedcolorTVchromaoutputcircuits. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:99.39 Kbytes Page:1 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
NPNEPITAXIALSILICONTRANSISTOR 文件:93.88 Kbytes Page:1 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
AudioFrequencyGeneralPurposeAmplifierApplications 文件:279.37 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscSiliconNPNTransistor 文件:235.34 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNTransistors 文件:987.55 Kbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
COLORTELEVISIONN1PSChassis 文件:2.69679 Mbytes Page:54 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
COLORTELEVISION 文件:2.69679 Mbytes Page:54 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
COLOURTELEVISIONC9PJChassis 文件:6.49885 Mbytes Page:126 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
LowFrequencyAmplifierNPNEpitaxialSiliconTransistor 文件:891.61 Kbytes Page:7 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | |||
LowLevelandGeneralPurposeAmplifiers 文件:84.74 Kbytes Page:1 Pages | MICRO-ELECTRONICS Micro Electronics | |||
AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSCNPNTRANSISTOR 文件:215.31 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
AudioFrequencyVoltageAmplifierApplicationsLowNoiseAmplifierApplications 文件:142.85 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSCNPNTRANSISTOR 文件:165.79 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |
2SC181产品属性
- 类型
描述
- 型号
2SC181
- 功能描述
SPECIFICATION TRANSISTORS,DIODES
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/ONSemiconductor/安森 |
2008++ |
SOT-23 |
57200 |
新进库存/原装 |
|||
UTC/友顺 |
19+ |
TO-92 |
13500 |
一级代理商,原装正品 |
|||
23+ |
N/A |
13150 |
正品授权货源可靠 |
||||
UTC |
23+ |
TO-92 |
16011 |
现货库存,实单请给接受价格 |
|||
TOS |
23+ |
TO |
20000 |
正品原装货价格低qq:2987726803 |
|||
UTC/友顺 |
22+ |
TO-92 |
40256 |
本公司只做原装进口现货 |
|||
UTC/友顺 |
24+ |
TO-92 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
UTC/友顺 |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
||||
CJ/TOSHIBA |
2048+ |
SOT-23 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
TGS |
2006 |
SOT23 |
1605 |
进口原装-真实库存-价实 |
2SC181规格书下载地址
2SC181参数引脚图相关
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- 485接口
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- 3g汽车
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- 2sc4226
- 2SC191
- 2SC190
- 2SC19
- 2SC189
- 2SC188
- 2SC187
- 2SC186
- 2SC1850
- 2SC185
- 2SC1849
- 2SC1848
- 2SC1847
- 2SC1846
- 2SC1845
- 2SC1844
- 2SC1843
- 2SC1842
- 2SC1841
- 2SC184
- 2SC183A
- 2SC183
- 2SC1828
- 2SC1827
- 2SC1826
- 2SC182
- 2SC1819
- 2SC1817
- 2SC1816
- 2SC1815LT1
- 2SC1815L
- 2SC1815
- 2SC1813
- 2SC1812
- 2SC1811(-1,-2)
- 2SC1811
- 2SC1810
- 2SC1809S
- 2SC1809
- 2SC1808
- 2SC1807
- 2SC1806
- 2SC1805
- 2SC1804
- 2SC1803
- 2SC1802
- 2SC1801
- 2SC1800
- 2SC180
- 2SC18
- 2SC1799
- 2SC1798
- 2SC1797
- 2SC1793
- 2SC1792
- 2SC1791
- 2SC1790
- 2SC1789
- 2SC1788
- 2SC1787
- 2SC1785
- 2SC1783
- 2SC1781
- 2SC1779
- 2SC1778
- 2SC1777
- 2SC1775
- 2SC1766
- 2SC1760
- 2SC1757
- 2SC1756
- 2SC1755
- 2SC1740
- 2SC1735
- 2SC1730
- 2SC1729
2SC181数据表相关新闻
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2SC2334中文资料
2019-2-18
DdatasheetPDF页码索引
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