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2SC1815晶体管资料

  • 2SC1815别名：2SC1815三极管、2SC1815晶体管、2SC1815晶体三极管

  • 2SC1815生产厂家：日本东芝公司

  • 2SC1815制作材料：Si-NPN

  • 2SC1815性质：通用型 （Uni）

  • 2SC1815封装形式：直插封装

  • 2SC1815极限工作电压：60V

  • 2SC1815最大电流允许值：0.15A

  • 2SC1815最大工作频率：>80MHZ

  • 2SC1815引脚数：3

  • 2SC1815最大耗散功率：0.4W

  • 2SC1815放大倍数：

  • 2SC1815图片代号：A-39

  • 2SC1815vtest：60

  • 2SC1815htest：80000100

  • 2SC1815atest：.15

  • 2SC1815wtest：.4

  • 2SC1815代换 2SC1815用什么型号代替：BC174,BC182,BC184,BC190,BC384,BC414,BC546,DG458,DG1815,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC1815

SiliconNPNEpitaxailType(forAudioFrequencyGeneralPurposeAmplifierApplications)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815

SiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent: VCEO=50V(min), IC=150mA(max) •ExcellenthFElinearity:hFE(2)=100(typ.) atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815

NPNTransistor

Features ●Powerdissipation

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SC1815

NPNTypePlasticEncapsulateTransistors

FEATURES •PowerDissipation PCM:0.4W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC1815

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description DesignedforuseindriverstageofAFamplifiergeneralpurposeamplification.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2SC1815

NPNEPITAXIALPLANARTRANSISTOR

Description The2SC1815isdesignedforuseindriverstageofAFamplifiergeneralpurposeamplification.

TGS

Tiger Electronic Co.,Ltd

TGS
2SC1815

NPNSILICONTRANSISTOR

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2SC1815

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Powerdissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SC1815

SiliconEpitaxialPlanarTransistor

FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity: hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplicati

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SC1815

SiliconEpitaxialPlanarTransistor

FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity:hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencyg

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2SC1815

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815

iscSiliconNPNTransistor

DESCRIPTION •HighVoltageandHighCurrent Vceo=50V(Min.),Ic=150mA(Max) •ExcellenthFELinearity •LowNoise •ComplementtoType2SA1015(O,Y,GRclass) APPLICATIONS •AudiofrequencygeneralpurposeamplifierApplications •Driverstageamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC1815

NPNEpitaxialPlanarTansistor

NPNEpitaxialPlanarTansistor

FCI

Amphenol ICC

FCI
2SC1815

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Powerdissipation

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SC1815

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2SC1815

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Highvoltageandhighcurrent,excellenthFElinearity,lownoise,complementarypairwith2SA1015. Applications Audiofrequencygeneralpurpose,driverstageamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC1815

NPNTransistors

Features ●Powerdissipation

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1815

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
2SC1815

LowLevelandGeneralPurposeAmplifiers

文件：84.74 Kbytes Page：1 Pages

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2SC1815

COLORTELEVISIONN1PSChassis

文件：2.69679 Mbytes Page：54 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815

COLORTELEVISION

文件：2.69679 Mbytes Page：54 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815

COLOURTELEVISIONC9PJChassis

文件：6.49885 Mbytes Page：126 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815

LowFrequencyAmplifierNPNEpitaxialSiliconTransistor

文件：891.61 Kbytes Page：7 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER
2SC1815

NPNTransistors

文件：987.55 Kbytes Page：2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SC1815

AudioFrequencyGeneralPurposeAmplifierApplications

文件：279.37 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815

iscSiliconNPNTransistor

文件：235.34 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC1815

AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSCNPNTRANSISTOR

文件：215.31 Kbytes Page：4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SC1815

AudioFrequencyVoltageAmplifierApplicationsLowNoiseAmplifierApplications

文件：142.85 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815_07

SiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent: VCEO=50V(min), IC=150mA(max) •ExcellenthFElinearity:hFE(2)=100(typ.) atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815-BL

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking:

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1815-BL

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
2SC1815GR

SiliconNPNEpitaxailType(forAudioFrequencyGeneralPurposeAmplifierApplications)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815GR

NPNTypePlasticEncapsulateTransistors

FEATURES •PowerDissipation PCM:0.4W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC1815GR

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description DesignedforuseindriverstageofAFamplifiergeneralpurposeamplification.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2SC1815GR

NPNSILICONTRANSISTOR

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2SC1815-GR

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking:

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1815-GR

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
2SC1815-H

NPNTransistors

Features ●Powerdissipation

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1815K

NPNTypePlasticEncapsulateTransistors

FEATURES •PowerDissipation PCM:0.2W(Ta=25°C) •CollectorCurrent ICM:0.15A •Collector-BaseVoltage V(BR)CBO:60V

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC1815L

TRANSISTOR(AUDIOFREQUENCYVOLTAGE,LOWNOISEAMPLIFIERAPPLICATIONS)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815-L

NPNTransistors

Features ●Powerdissipation

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1815L-GR

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815LT1

SOT-23Plastic-EncapsulateTransistors(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation

TGS

Tiger Electronic Co.,Ltd

TGS
2SC1815LT1

NPNEPITAXIALSILICONTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR *Complementto2SA1015 *CollectorCurrent:Ic=150mA

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SC1815L-Y

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications •Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) •ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1815-O

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking:

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1815-O

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
2SC1815W

NPNTransistorEpitaxialPlanarTransistor

Description The2SC1815WisdesignedforuseindriverstageofAFamplifierandgeneralpurposeamplificaion.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC1815-Y

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SC1815isNPNSiliconEpitaxialTransistorDesignedforRF,AF AmplifierandGeneralPurposeApplications. •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Marking:

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1815-Y

SILICONNPNTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2SC1815Series aresiliconNPNtransistors,manufacturedbythe epitaxialplanarprocess,designedforgeneralpurpose amplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
2SC1815_05

AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSCNPNTRANSISTOR

文件：165.79 Kbytes Page：4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SC1815_11

AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSCNPNTRANSISTOR

文件：215.31 Kbytes Page：4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SC1815_15

NPNTransistors

文件：987.55 Kbytes Page：2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SC1815_19

iscSiliconNPNTransistor

文件：235.34 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC1815-1

NPNEpitaxialPlanarTransistor

文件：839.81 Kbytes Page：2 Pages

FCI

Amphenol ICC

FCI
2SC1815-BL

NPNSiliconEpitaxialTransistor

文件：480.47 Kbytes Page：3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1815-BL-AP

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1815-BL-BP

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1815-BL-T92-B-B

AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSCNPNTRANSISTOR

文件：165.79 Kbytes Page：4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2SC1815产品属性

  • 类型

    描述

  • 型号

    2SC1815

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    TRANSISTOR NPN TO-92

  • 制造商

    TT Electronics/Semelab

  • 功能描述

    NPN transistor,2SC1815 0.15A Ic 6Vce

2SC1815供应商更多...

更新时间：2024-4-23 17:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金嘉锐电子有限公司
2SC1815
Toshiba
2024+
TO-92
32560
原装优势绝对有货
询价
深圳市勤思达科技有限公司
2SC1815
中信
23+
TO-92
8500
全新原装现货,公司只做原装
询价
深圳市莱克讯科技有限公司
2SC1815
ON
2017+
SOT23SOT323
25689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
深圳兆威电子有限公司
2SC1815-GR
TOSHIBA/东芝
15+
TO92
35250
原装进口现货,假一罚十
询价
深圳市金启宁科技有限公司
2SC1815-TA
CJ(长电)
2206+
TO-92
11152
专营原装正品,现货特价中!QQ:1978835518/192523
询价
深圳市振宏微科技有限公司
2SC1815
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市湘达电子有限公司
2SC1815
CJ/长电科技
20+
TO-92
6600
原装现货,特价出售。
询价
深圳市昌和盛利电子有限公司
2SC1815
PHI
23+
SOP
125300
询价
深圳市美思瑞电子科技有限公司
2SC1815L-GR-T92-B
友顺 UTC
23+
TO-92
22560
原装正品，实单请联系
询价
深圳市富利微电子科技有限公司
2SC1815M
蓝箭
23+
SOT-23
33500
全新进口原装现货,假一罚十
询价

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2SC1815规格书下载地址

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