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2SB108晶体管资料
2SB108别名:2SB108三极管、2SB108晶体管、2SB108晶体三极管
2SB108生产厂家:日本日电公司
2SB108制作材料:Ge-PNP
2SB108性质:低频或音频放大 (LF)_输出极 (E)
2SB108封装形式:直插封装
2SB108极限工作电压:40V
2SB108最大电流允许值:0.5A
2SB108最大工作频率:<1MHZ或未知
2SB108引脚数:2
2SB108最大耗散功率:0.5W
2SB108放大倍数:
2SB108图片代号:D-90
2SB108vtest:40
2SB108htest:999900
- 2SB108atest:.5
2SB108wtest:.5
2SB108代换 2SB108用什么型号代替:AD162,AD262,2SB493,3AX55A,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SCHOTTKYBARRIERDIODECHIPS DESCRIPTION ➤2SB108040MLisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Lowpowerlosses,highefficiency; ➤Guardringconstructionfortransientprotection; ➤HighESDcapability; ➤Highsurgecapability; ➤Packagedproductsarewidelyuse | SILANSilan 士兰 | |||
SCHOTTKYBARRIERDIODECHIPS DESCRIPTION ➤2SB108060MLisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Lowpowerlosses,highefficiency; ➤Guardringconstructionfortransientprotection; ➤HighESDcapability; ➤Highsurgecapability; ➤Packagedproductsarewidelyuse | SILANSilan 士兰 | |||
LOWIRSCHOTTKYBARRIERDIODECHIPS DESCRIPTION ➤2SB108100MAisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Duetospecialschottkybarrierstructure,thechips haveverylowreverseleakagecurrent(typical IR=0.002mA@Vr=100V)andmaximum150°C opera | SILANSilan 士兰 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1562 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1562 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1562 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •WideAreaofSafeOperation •ComplementtoType2SD1562 APPLICATIONS •Designedforlowfrequencypoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1562A •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
EpitaxialPlanarPNPSiliconTransistor EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1562A •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1562A •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-126package •Complementtotype2SD1563 •Lowcollectorsaturationvoltage •Largecurrentcapability APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-126package •Complementtotype2SD1563 •Lowcollectorsaturationvoltage •Largecurrentcapability APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-126package •Complementtotype2SD1563 •Lowcollectorsaturationvoltage •Largecurrentcapability APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •WideAreaofSafeOperation •ComplementtoType2SD1563 APPLICATIONS •Designedforlowfrequencypoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SD1563A ·Lowcollectorsaturationvoltage ·Largecurrentcapability APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SD1563A ·Lowcollectorsaturationvoltage ·Largecurrentcapability APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SD1563A ·Lowcollectorsaturationvoltage ·Largecurrentcapability APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Forlowfrequencypoweramplifierandlowspeedpowerswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Forlowfrequencypoweramplifierandlowspeedpowerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Forlowfrequencypoweramplifierandlowspeedpowerswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •HighDCCurrentGain-:hFE=2000(Min)@(VCE=-2V,lc=-2A) APPLICATIONS •Designedforlowfrequencypoweramplifiersandlowspeedswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:95.55 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:162.94 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:162.94 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:95.52 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:162.75 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:162.75 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:102.37 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:152.33 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:152.33 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:102.15 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:152.2 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:152.2 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:90.2 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:151.94 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:151.94 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
iscSiliconPNPPowerTransistor 文件:154.29 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor 文件:126.1 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |
2SB108产品属性
- 类型
描述
- 型号
2SB108
- 制造商
SILAN
- 制造商全称
Silan Microelectronics Joint-stock
- 功能描述
SCHOTTKY BARRIER DIODE CHIPS
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
120V1.5A20W |
79 |
进口原装-真实库存-价实 |
|||||
FSC |
21+ |
TO126 |
50000 |
全新原装正品现货,支持订货 |
|||
FSC/Fairchild Semiconductor Co |
21+ |
TO126 |
800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
isc |
2024 |
TO-220 |
15000 |
国产品牌isc,可替代原装 |
|||
FSC |
21+ |
TO126 |
800 |
原装现货假一赔十 |
|||
23+ |
N/A |
35700 |
正品授权货源可靠 |
||||
ROHM/罗姆 |
2021+ |
TO-220 |
33400 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ISC |
20+ |
TO-126 |
15800 |
原装优势主营型号-可开原型号增税票 |
|||
RHM |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FAIRCHILD/仙童 |
TO-220 |
265209 |
假一罚十原包原标签常备现货! |
2SB108规格书下载地址
2SB108参数引脚图相关
- 5000
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- 4899
- 485接口
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- 3q1
- 3g汽车
- 3579
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- 303c
- 2sc4226
- 2SB1109
- 2SB1108
- 2SB1106
- 2SB1105
- 2SB1103
- 2SB1102
- 2SB1101
- 2SB1100
- 2SB1098
- 2SB1097
- 2SB1096
- 2SB1095
- 2SB1094
- 2SB1093
- 2SB1092
- 2SB1091
- 2SB1090
- 2SB109
- 2SB108B
- 2SB108A
- 2SB1089
- 2SB1088
- 2SB1087
- 2SB1086A
- 2SB1086
- 2SB1085A
- 2SB1085
- 2SB1080
- 2SB107A
- 2SB1079
- 2SB1078
- 2SB1077
- 2SB1076(M)
- 2SB1076
- 2SB1075
- 2SB1074
- 2SB1073
- 2SB1072L,S
- 2SB1072
- 2SB1071A
- 2SB1071
- 2SB1070A
- 2SB1070
- 2SB107
- 2SB1069A
- 2SB1069
- 2SB1068
- 2SB1067
- 2SB1065
- 2SB1064
- 2SB1063
- 2SB1062
- 2SB1061
- 2SB1059
- 2SB1058
- 2SB1057
- 2SB1056
- 2SB1055
2SB108数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SA2198
2SA2198,全新原装当天发货或门市自取0755-82732291.
2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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