PowerAmplifierApplications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SC2873

GENERALPURPOSETRANSISTOR

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TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SC2873

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

PNPSiliconMediumPowerTransistor

*Features Lowpowerdissipation0.5W CollectorCurrent-2A *Stucture Epitaxialplanartype. PNPsilicontransistor.

PowerSwitchingApplications

Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873

PowerAmplifierApplicationsPowerSwitchingApplications

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