2SA1213晶体管资料

  • 2SA1213别名:2SA1213三极管、2SA1213晶体管、2SA1213晶体三极管

  • 2SA1213生产厂家:日本东芝公司

  • 2SA1213制作材料:Si-PNP

  • 2SA1213性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SA1213封装形式

  • 2SA1213极限工作电压:50V

  • 2SA1213最大电流允许值:2A

  • 2SA1213最大工作频率:120MHZ

  • 2SA1213引脚数

  • 2SA1213最大耗散功率

  • 2SA1213放大倍数

  • 2SA1213图片代号:NO

  • 2SA1213vtest:50

  • 2SA1213htest:120000000

  • 2SA1213atest:2

  • 2SA1213wtest:0

  • 2SA1213代换 2SA1213用什么型号代替:2SA1417,2SB1029,2SB1123,2SB1313,3CA4B,

2SA1213价格

参考价格:¥0.7859

型号:2SA1213-Y-TP 品牌:MCC 备注:这里有2SA1213多少钱,2024年最近7天走势,今日出价,今日竞价,2SA1213批发/采购报价,2SA1213行情走势销售排行榜,2SA1213报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SA1213

PNPSiliconMediumPowerTransistor

*Features Lowpowerdissipation0.5W CollectorCurrent-2A *Stucture Epitaxialplanartype. PNPsilicontransistor.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SA1213

PowerSwitchingApplications

Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SA1213

TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SC2873

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SA1213

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SA1213

NewJerseySemi-ConductorProducts,

NewJerseySemi-ConductorProducts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SA1213

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SA1213

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SA1213

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Lowcollectorsaturationvoltage,Highspeedswitchingtime,smallflatpackage,Complementaryto2SC2873. Applications Poweramplifierandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SA1213

PowerAmplifierApplications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SC2873

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SA1213

SiliconPlanarEpitaxialTransistor

FEATURES ●Lowsaturationvoltage ●Highspeedswitchingtime ●Smallflatpackage ●PC=1.0to2.0W(mountedonceramicsubstrate) ●Complementaryto2SC2873

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SA1213

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SA1213

TRANSISTOR竊늁NP竊

FEATURES Powerdissipation PCM:0.5W(Tamb=25℃) Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2SA1213

TRANSISTOR(PNP)

FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SA1213

PNPTransistors

Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SA1213

SiliconPlanarEpitaxialTransistor

文件:146.29 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SA1213

PowerAmplifierApplicationsPowerSwitchingApplications

文件:200.71 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SA1213

PowerAmplifierApplicationsPowerSwitchingApplications

文件:169.57 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Plastic-EncapsulateTransistors

FEATURES ●Complementaryto2SC2873A ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

Plastic-EncapsulateTransistors

FEATURES ●Complementaryto2SC2873A ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

Plastic-EncapsulateTransistors

FEATURES ●Complementaryto2SC2873A ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

GeneralPurposeTransistor

Features -Smallflatpackage. -Poweramplifierandswitchingapplications. -Lowsaturationvoltage. -Highspeedswitchingtime.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

PNPTransistors

Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LowSaturationvoltage:VCE(sat)=0.5V(max.)(IC=1.0A) •Smallflatpackage •PC=1.0to2.0W(mountedonceramicsubstrate) •HighSpeedSwitchingTime:tstg=1.0µs(typ.) •EpoxymeetsUL

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPEpitaxialTransistor

VOLTAGE50VoltsCURRENT2Ampere FEATURE *Smallflatpackage.(SC-62/SOT-89) *LowsaturationvoltageVCE(sat)=-0.5V(max.)(IC=-1A) *Highspeedswitchingtime:tstg=1.0uSec(typ.) *PC=1.0to2.0W(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *Power

CHENMKOCHENMKO

CHENMKO

CHENMKO

PowerAmplifierApplications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SC2873

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LowSaturationvoltage:VCE(sat)=0.5V(max.)(IC=1.0A) •Smallflatpackage •PC=1.0to2.0W(mountedonceramicsubstrate) •HighSpeedSwitchingTime:tstg=1.0µs(typ.) •EpoxymeetsUL

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPTransistors

Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

PowerAmplifierApplicationsPowerSwitchingApplications

文件:169.57 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

PowerAmplifierApplicationsPowerSwitchingApplications

文件:200.71 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

PNPTRANSISTOR

文件:75.63 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

PNPTransistors

文件:1.66601 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconPlanarEpitaxialTransistor

文件:146.29 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

PNPTransistors

文件:1.66601 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPSiliconEpitaxialTransistors

文件:552.4 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPSiliconEpitaxialTransistors

文件:552.4 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-243AA 包装:卷带(TR) 描述:TRANS PNP 50V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPTransistor

文件:804.03 Kbytes Page:3 Pages

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI

GENERALPURPOSETRANSISTOR

文件:370.33 Kbytes Page:4 Pages

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

PNPTransistors

文件:1.66601 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPSiliconEpitaxialTransistors

文件:552.4 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

2SA1213产品属性

  • 类型

    描述

  • 型号

    2SA1213

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    TRANSISTOR, SI-P, 50V, 2A, .5W, 120 MHZ - Tape and Reel

  • 制造商

    Toshiba

  • 功能描述

    PNP

更新时间:2024-5-29 20:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP/微芯
23+
20000
原装现货,可追溯原厂渠道
CJ/长电
1106+
SOT-89
29403
原盒原标,正品现货 诚信经营 价格美丽 假一罚十
TOSHIBA
21+
SOT89
9800
只做原装正品假一赔十!正规渠道订货!
CJ/长晶
23+
SOT-89
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
TOSHIBA/东芝
SOT89
5000
只做原装支持实单需要联系Q:235
CJ
21+
SOT-89
1000
只做原装,一定有货,不止网上数量,量多可订货!
TOSHIBA
23+
SOP
16000
正规渠道,只有原装!
CJ/长电
23+
NA
7825
原装正品!清仓处理!
长电
21+
SOT-89-3L
57026
原装现货假一赔十
TOSHIBA
22+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电

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