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位置：首页 > IC中文资料第12902页 > 2N59

2N59晶体管资料

  • 2N59别名：2N59三极管、2N59晶体管、2N59晶体三极管

  • 2N59生产厂家：CSR_美国电子晶体管公司_IDI

  • 2N59制作材料：Ge-PNP

  • 2N59性质：低频或音频放大 （LF）

  • 2N59封装形式：直插封装

  • 2N59极限工作电压：25V

  • 2N59最大电流允许值：0.2A

  • 2N59最大工作频率：<1MHZ或未知

  • 2N59引脚数：3

  • 2N59最大耗散功率：0.18W

  • 2N59放大倍数：β=90

  • 2N59图片代号：D-9

  • 2N59vtest：25

  • 2N59htest：999900

  • 2N59atest：.2

  • 2N59wtest：.18

  • 2N59代换 2N59用什么型号代替：AC122,AC125,AC126,AC151,ASY26,ASY27,2N1191,2N1192,2N1193,2N1194,3AX53A,

2N59价格

参考价格：￥44.8394

型号：2N5912 品牌：National 备注：这里有2N59多少钱，2024年最近7天走势，今日出价，今日竞价，2N59批发/采购报价，2N59行情走势销售排行榜，2N59报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N5902

MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER

2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5902

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5902

MonolithicDualN-ChannelJFETGeneralPurposeAmplifier

FEATURES •TightTracking •GoodMatching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5903

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5903

MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER

2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5904

MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER

2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5904

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5905

MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER

2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5905

DUALN-CHANNELJFET

FEATURES •TightTracking •GoodMatching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5905

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5906

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5906

MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER

2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5907

MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER

2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5907

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5908

MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER

2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5908

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5908

LOWNOISE,LOWDRIFTMONOLITHICDUALN-CHANNELJFET

The2N5908isahigh-performancemonolithicdualJFETfeaturingtightmatchingandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplicationswheretighttrackingisrequired. ThehermeticallysealedTO-78packageiswellsuitedfo

MICROSS

MICROSS

MICROSS
2N5908_TO-78

LOWNOISE,LOWDRIFTMONOLITHICDUALN-CHANNELJFET

The2N5908isahigh-performancemonolithicdualJFETfeaturingtightmatchingandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplicationswheretighttrackingisrequired. ThehermeticallysealedTO-78packageiswellsuitedfo

MICROSS

MICROSS

MICROSS
2N5909

MONOLITHICDUALNCHANNELJFETGENERALPURPOSEAMPLIFIER

2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5909

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5910

PMPSILICONSWITCHINGTRANSISTORS

SmallSignalTransistorsTO-92Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N5910

PNPULTRAHIGHSPEEDSATURATEDLOGICSWITCHES

DIFFUSEDSILICONPLANAREPITAXIALTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5911

DualN-ChannelSiliconJunctionField-EffectTransistor

DualN-ChannelSiliconJunctionField-EffectTransistor ●WidebandDifferentialAmplifiers

InterFET

InterFET Corporation

InterFET
2N5911

DualN-ChannelJFETHighFrequencyAmplifier

FEATURES •TightTracking •LowInsertionLoss •GoodMatching

Calogic

Calogic, LLC

Calogic
2N5911

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5911

DIFFETENTIALPAIRSN-CHANNELSILICONJUNCTIONFIELD-EFFECTTRANSISTORS

DIFFETENTIALPAIRSN-CHANNELSILICONJUNCTIONFIELD-EFFECTTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5911-12

DualN-ChannelJFETHighFrequencyAmplifier

FEATURES •TightTracking •LowInsertionLoss •GoodMatching

Calogic

Calogic, LLC

Calogic
2N5912

DualN-ChannelJFETHighFrequencyAmplifier

FEATURES •TightTracking •LowInsertionLoss •GoodMatching

Calogic

Calogic, LLC

Calogic
2N5912

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
2N5912

DualN-ChannelSiliconJunctionField-EffectTransistor

DualN-ChannelSiliconJunctionField-EffectTransistor ●WidebandDifferentialAmplifiers

InterFET

InterFET Corporation

InterFET
2N5912

LinearSystemsreplacesdiscontinuedSiliconix&National

LinearSystemsreplacesdiscontinuedSiliconix&National2N5912 The2N5912aremonolithicdualJFETs.Themonolithicdualchipdesignreducesparasiticsandgivesbetterperformanceatveryhighfrequencieswhileensuringextremelytightmatching.Thesedevicesareanexcellentchoiceforus

MICROSS

MICROSS

MICROSS
2N5912

DIFFETENTIALPAIRSN-CHANNELSILICONJUNCTIONFIELD-EFFECTTRANSISTORS

DIFFETENTIALPAIRSN-CHANNELSILICONJUNCTIONFIELD-EFFECTTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5914

High-PowerSiliconN-P-NOverlayTransistors

Feafures: Lowinductanceradialieads~particutariyusefuliforstrip-iinecircuits sHermeticallysealedceramic-metalpackage Electricallyisolatedmountingstud e6wattsminimumoutputfrom2N5915amplifierat470MHz e7-dBgainfrom2N5914driverat470MHz

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2N5915

High-PowerSiliconN-P-NOverlayTransistors

Feafures: Lowinductanceradialieads~particutariyusefuliforstrip-iinecircuits sHermeticallysealedceramic-metalpackage Electricallyisolatedmountingstud e6wattsminimumoutputfrom2N5915amplifierat470MHz e7-dBgainfrom2N5914driverat470MHz

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2N5928

SILICONNPNTRANSISTOR

SILICONNPNTRANSISTOR150AMPERES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5929

iscSiliconNPNPowerTransistors

DESCRIPTION ·DCCurrentGain- :hFE=20-100@IC=10A ·LowCollectorSaturationVoltage- :VCE(sat)=1.0V(Max)@IC=15A APPLICATIONS ·Designedforgeneralpurposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N593

BIDIRECTIONALTRANSISTOR

BidirectionalTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5930

iscSiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=15A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5930

SiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=15A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5932

SiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5932

iscSiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=10A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5933

iscSiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=20A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5933

SiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=20A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5934

SiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=20A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5934

iscSiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=20A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforgeneralpurposepoweramplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5935

SiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@lc=30A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@lc=20A APPLICATIONS •Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid/r

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5935

iscSiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=30A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5936

iscSiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=30A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N5936

SiliconNPNPowerTransistors

DESCRIPTION •DCCurrentGain-:hFE=20-100@IC=30A •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=20A APPLICATIONS •Designedforuseinpowerswitchingcircuits,audioamplifiers,seriesandshunt-regulators,driverandoutputstages,DC-DCconverters,inverters,andsolenoid

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5943

NPNSILICONHIGH-FREQUENCY

1.2GHz-50mAdc NPNSILICONHIGH-FREQUENCYTRANSISOTR NPNSILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5943

NPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION: The2N5943isaHighFrequencyTransistorforGeneralPurposeAmplifierApplications.

ASI

Advanced Semiconductor, Inc

ASI
2N5944

RF&MICROWAVETRANSISTORS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
2N5944

RF&MIROWAVETRANSISTORS

2.0,4.0,10W-470MHzRFPOWERTRANSISTORSNPNSILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5945

NPNSILICONRFPOWERTRANSISTOR

2.0,4.0,10W-470MHzRFPOWERTRANSISTORSNPNSILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5946

RFPOWERTRANSISTORS

2.0,4.0,10W-470MHzRFPOWERTRANSISTORSNPNSILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5949

N-CHANNELJFETS

N-ChannelJFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N5949

N-ChannelJFETs

[TAITRON] P-ChannelPowerMOSFETs N-ChannelJFETs N-ChannelMetalCanJFETs

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
2N5949

SFETRF,VHF,UHF,Amplitiers

N-ChannelRFAmplifier •ThisdeviceisdesignedforRFamplifierandmixerapplications operatingupto450MHz,andforanalogswitchingrequiringlow capacitance. •Sourcedfromprocess50.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N5950

SFETRF,VHF,UHF,Amplitiers

N-ChannelRFAmplifier •ThisdeviceisdesignedforRFamplifierandmixerapplications operatingupto450MHz,andforanalogswitchingrequiringlow capacitance. •Sourcedfromprocess50.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N5950

N-ChannelJFETs

[TAITRON] P-ChannelPowerMOSFETs N-ChannelJFETs N-ChannelMetalCanJFETs

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

2N59产品属性

  • 类型

    描述

  • 型号

    2N59

  • 功能描述

    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-66

2N59供应商更多...

更新时间：2024-5-21 9:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市河锋鑫科技有限公司
2N5950
Fairchild/ON
22+
TO923
9000
原厂渠道,现货配单
询价
深圳市高捷芯城科技有限公司
2N5950
onsemi(安森美)
23+
TO-92-3
9203
支持大陆交货,美金交易。原装现货库存。
询价
深圳市正迈科技有限公司
2N5950
FSC/ON
23+
原包装原封 □□
2438
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
深圳市卓越微芯电子有限公司
2N5950
原厂
2020+
2438
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市芯福林电子科技有限公司
2N5950
Fairchild/ON
21+
TO923
13880
公司只售原装,支持实单
询价
深圳市天芯威科技有限公司
2N5950
Fairchild/ON
21+
TO923
13880
公司只售原装 支持实单
询价
深圳市特顺芯科技有限公司
2N5950
仙童
03+
TO-92
5000
询价
上海金庆电子技术有限公司
2N5951
TI
新
1415
全新原装 货期两周
询价
深圳市宏捷佳电子科技有限公司
2N5950
onsemi
24+
TO-226-3,TO-92-3 标准主体(!-
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
深圳市旺财半导体有限公司
2N5950
FAIRCHILD
23+
2800
正品原装货价格低qq:2987726803
询价

2N59芯片相关品牌

  • AAC
  • AITSEMI
  • Atmel
  • BITECH
  • DBLECTRO
  • HUAXINAN
  • MOLEX3
  • Nuvoton
  • OSRAM
  • RECOM
  • SIEMENS
  • WILLOW

2N59规格书下载地址

2N59参数引脚图相关

2N59数据表相关新闻

DdatasheetPDF页码索引

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