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2N41晶体管资料
2N41别名：2N41三极管、2N41晶体管、2N41晶体三极管
2N41生产厂家：美国无线电公司
2N41制作材料：Ge-PNP
2N41性质：低频或音频放大 （LF）_开关管 （S）_CF_射频/高频
2N41封装形式：直插封装
2N41极限工作电压：25V
2N41最大电流允许值：0.015A
2N41最大工作频率：<1MHZ或未知
2N41引脚数：3
2N41最大耗散功率：0.05W
2N41放大倍数：
2N41图片代号：D-77
2N41vtest：25
2N41htest：999900
- 2N41atest：.015
2N41wtest：.05
2N41代换 2N41用什么型号代替：AC122,AC125,AC126,AC151,ASY26,ASY26,2N1191,2N1192,2N1193,2N1194,2N1195,3AX51B,
2N41价格
参考价格：￥32.0894
型号：2N4117A 品牌：InterFET 备注：这里有2N41多少钱，2024年最近7天走势，今日出价，今日竞价，2N41批发/采购报价，2N41行情走势销售排行榜，2N41报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   | |
DUALMONOLITHICMATCHEDNPNSILICON GENERALDESCRIPTION DualmonolithicmatchedNPNsiliconplanartransistorsusedfordifferentialapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
SPRINGFIELD,NEWJERSEY07081 Thyristors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
SCR,V(DRM)=600VTO699.9V Thyristors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
5-ASILICONCONTROLLEDRECTIFIERS 5-ASiliconControlledRectifiers ForLow-CostPower-ControlandPower-SwitchingApplications Features ■Highdi/dtanddv/dtcapabilities ■Lowleakagecurrents,bothforwardandreverse ■Lowforwardvoltagedropathighcurrentlevels ■Lowthermalresistance | GESSGE Solid State GE Solid State |  | | |
SPRINGFIELD,NEWJERSEY07081 Thyristors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
SCR,V(DRM)=600VTO699.9V Thyristors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
SILICONCONTROLLEDRECTIFIER16AMPS220THRU800VOLTSJEDECTO-3CASE ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | CentralCentral Semiconductor Corp 美国中央半导体 |  | | |
iscSiliconNPNPowerTransistor DESCRIPTION •ExcellentSafeOperatingArea •LowCollector-EmitterSaturationVoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation. APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscSiliconNPNPowerTransistor DESCRIPTION •ExcellentSafeOperatingArea •LowCollector-EmitterSaturationVoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation. APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelSiliconJunctionField-EffectTransistor GeneralInformation | InterFET InterFET Corporation |  | | |
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
N-ChannelSiliconJunctionField-EffectTransistor N-ChannelSiliconJunctionField-EffectTransistor ●AudioAmplifiers ●Ultra-HighInputImpedanceAmplifiers | RHOPOINT Rhopoint Instruments |  | | |
N-ChannelJFETGeneralPurposeAmplifier FEATURES •LowLeakage •LowCapacitance | Calogic Calogic, LLC |  | | |
N-ChannelJFETGeneralPurposeAmplifier FEATURES •LowLeakage •LowCapacitance | Calogic Calogic, LLC | | | |
N-ChannelJFETs DESCRIPTION The2N/PN/SST4117Aseriesofn-channelJFETsprovideultra-highinputimpedance.Thesedevicesarespecifiedwitha1-pAlimitandtypicallyoperateat0.2pA.Thismakesthemperfectchoicesforuseashigh-impedancesensitivefront-endamplifiers. FEATURES ●Ultra-LowLeakag | VishayVishay Siliconix 威世科技 |  | | |
N-ChannelSiliconJunctionField-EffectTransistor N-ChannelSiliconJunctionField-EffectTransistor ●AudioAmplifiers ●Ultra-HighInputImpedanceAmplifiers | RHOPOINT Rhopoint Instruments | | | |
anUltra-HighInputImpedanceN-ChannelJFET TheLS4117AisanUltra-HighInputImpedanceN-ChannelJFET TheLS4117Aprovidesultra-highinputimpedance.Thedeviceisspecifiedwitha1-pAlimitandtypicallyoperatesat0.2pA.Thepartisidealforuseasahighimpedancesensitivefront-endamplifier. LS4117ABenefits: Ins | MICROSS MICROSS |  | | |
N-ChannelSiliconJunctionField-EffectTransistor N-ChannelSiliconJunctionField-EffectTransistor ●AudioAmplifiers ●Ultra-HighInputImpedanceAmplifiers | RHOPOINT Rhopoint Instruments | | | |
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
N-ChannelJFETGeneralPurposeAmplifier FEATURES •LowLeakage •LowCapacitance | Calogic Calogic, LLC | | | |
N-ChannelJFETGeneralPurposeAmplifier FEATURES •LowLeakage •LowCapacitance | Calogic Calogic, LLC | | | |
N-ChannelJFETs DESCRIPTION The2N/PN/SST4117Aseriesofn-channelJFETsprovideultra-highinputimpedance.Thesedevicesarespecifiedwitha1-pAlimitandtypicallyoperateat0.2pA.Thismakesthemperfectchoicesforuseashigh-impedancesensitivefront-endamplifiers. FEATURES ●Ultra-LowLeakag | VishayVishay Siliconix 威世科技 | | | |
N-ChannelSiliconJunctionField-EffectTransistor N-ChannelSiliconJunctionField-EffectTransistor ●AudioAmplifiers ●Ultra-HighInputImpedanceAmplifiers | RHOPOINT Rhopoint Instruments | | | |
P-CHANNELJFET GENERALINFORMATION/CROSSREFERENCES | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
N-ChannelSiliconJunctionField-EffectTransistor N-ChannelSiliconJunctionField-EffectTransistor ●AudioAmplifiers ●Ultra-HighInputImpedanceAmplifiers | RHOPOINT Rhopoint Instruments | | | |
N-ChannelJFETGeneralPurposeAmplifier FEATURES •LowLeakage •LowCapacitance | Calogic Calogic, LLC | | | |
N-ChannelJFETGeneralPurposeAmplifier FEATURES •LowLeakage •LowCapacitance | Calogic Calogic, LLC | | | |
N-ChannelJFETs DESCRIPTION The2N/PN/SST4117Aseriesofn-channelJFETsprovideultra-highinputimpedance.Thesedevicesarespecifiedwitha1-pAlimitandtypicallyoperateat0.2pA.Thismakesthemperfectchoicesforuseashigh-impedancesensitivefront-endamplifiers. FEATURES ●Ultra-LowLeakag | VishayVishay Siliconix 威世科技 | | | |
N-ChannelSiliconJunctionField-EffectTransistor N-ChannelSiliconJunctionField-EffectTransistor ●AudioAmplifiers ●Ultra-HighInputImpedanceAmplifiers | RHOPOINT Rhopoint Instruments | | | |
NPNSILICONPLANAREPITAXIALTRANSISTOR
| MICRO-ELECTRONICS Micro Electronics |  | | |
SmallSignalTransistors SmallSignalTransistors | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier Thisdeviceisdesignedforuseasgeneralpurposeamplifiers andswitchesrequiringcollectorcurrentsto100mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
NPNEPITAXIALSILICONTRANSISTOR
| SamsungSamsung Group 三星三星半导体 |  | | |
NPNSiliconGeneralPurposeTransistor625mW Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •ThroughHoleTO-92Package •Capableof625mWattsofPowerDissipation •EpoxymeetsUL94V-0flammabilityrating •Mois | MCCMicro Commercial Components 美微科美微科半导体公司 |  | | |
NPNSiliconGeneralPurposeTransistor625mW Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •ThroughHoleTO-92Package •Capableof625mWattsofPowerDissipation •EpoxymeetsUL94V-0flammabilityrating •Mois | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
NPNSILICONPLANAREPITAXIALTRANSISTOR
| MICRO-ELECTRONICS Micro Electronics | | | |
NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
SmallSignalTransistors(NPN) FEATURES ♦NPNSiliconEpitaxialTransistor forswitchingandamplifierapplications. ♦EspeciallysuitableforAF-driverand low-poweroutputstages. ♦Ascomplementarytype,thePNP transistor2N4126isrecommended. | GE GE Industrial Company |  | | |
NPNEPITAXIALSILICONTRANSISTOR GENERALPURPOSETRANSISTOR •Collector-EmitterVoltage:VCEO=25V •CollectorDissipation:PC(max)=625mW | SamsungSamsung Group 三星三星半导体 | | | |
NPNgeneralpurposetransistor DESCRIPTION NPNtransistorinaTO-92;SOT54plasticpackage. PNPcomplement:2N4126. FEATURES •Lowcurrent(max.200mA) •Lowvoltage(max.25V). APPLICATIONS •Generalpurposeswitchingandamplification, e.g.small-signalaudio-frequencyapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
NPNSMALLSIGNALTRANSISTOR FEATURES ForGeneralPurposeSwitchingandAmplifier Applications EspeciallySuitableforAFDriverandLow PowerOutputStages | TRSYS Transys Electronics |  | | |
SmallSignalTransistors SmallSignalTransistors | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
NPNPlasticEncapsulatedTransistor 0.2A,30VNPNPlasticEncapsulatedTransistor FEATURES ●HighDCCurrentGain ●HighTransitionFrequency | SECOS SeCoS Halbleitertechnologie GmbH |  | | |
NPNSMALLSIGNALGENERALPURPOSEAMPLIFIERANDSWITCH NPNSMALLSIGNALGENERALPURPOSEAMPLIFIERANDSWITCH | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighDCCurrentGain ●HighTransitionFrequency | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
SmallSignalTransistors SmallSignalTransistors | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
PNPGeneralPurposeAmplifier PNPGeneralPurposeAmplifier Thisdeviceisdesignedforuseasgeneralpurposeamplifiersandswitchesrequiringcollectorcurrentsof10µAto100mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PNPEPITAXIALSILICONTRANSISTOR AMPLIIFERTRANSISTOR •Collector-EmitterVoltage:VCEO=30V •CollectorDissipation:PC(max)=625mW | SamsungSamsung Group 三星三星半导体 | | | |
PNPgeneralpurposetransistor DESCRIPTION PNPtransistorinaTO-92;SOT54plasticpackage. NPNcomplement:2N4124. FEATURES •Lowcurrent(max.200mA) •Lowvoltage(max.25V). APPLICATIONS •Generalpurposeswitchingandamplification, e.g.small-signalaudio-frequencyapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
PNPSMALLSIGNALTRANSISTOR
| TRSYS Transys Electronics | | | |
PNPEPITAXIALSILICONTRANSISTOR
| SamsungSamsung Group 三星三星半导体 | | | |
PNPGeneralPurposeAmplifier PNPGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcollectorcurrentsto10µAasaswitchandto100mAasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
SmallSignalTransistors(PNP) FEATURES ♦PNPSiliconEpitaxialTransistor forswitchingandamplifierapplications. Especiallysuit-ableforAF-driverandlow-poweroutputstages. ♦Ascomplementarytype,theNPNtransistor2N4124isrecommended. | GE GE Industrial Company | | | |
SmallSignalTransistors SmallSignalTransistors | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
PNPPlasticEncapsulatedTransistor FEATURES ●PNPSiliconEpitaxialTransistorforSwitchingandAmplifierApplications. ●Complementaryofthe2N4124 | SECOS SeCoS Halbleitertechnologie GmbH | | | |
SmallSignalTransistor(PNP) Features •PNPSiliconEpitaxialTransistorforswitchingandamplifierapplications. •EspeciallysuitableforAF-driverandlow-poweroutputstages. •Ascomplementarytype,theNPNtransistor2N4124isrecommended. | VishayVishay Siliconix 威世科技 | | | |
TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●PNPSiliconEpitaxialTransistorforSwitchingandAmplifierApplications. ●AsComplementaryType,TheNPNTransistor2N4124isRecommended. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
SiliconPNPtransistorinaTO-92PlasticPackage Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features Lowcurrent,Lowvoltage. Applications Generalpurposeamplifierandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
SIPNPLPHFBJT
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2N41产品属性
- 类型
描述
- 型号
2N41
- 功能描述
TRANSISTOR | BJT | PNP | 15MA I(C) | TO-1
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI/VIS |
23+ |
8890 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
||||
HGF/恒光发 |
23+ |
NA/ |
10016 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
22+ |
5000 |
||||||
NS/国半 |
23+ |
TO-92 |
90000 |
原装原盘 |
|||
原厂 |
2020+ |
10000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
CHINA |
22+ |
TO-39 |
640 |
航宇科工半导体-央企合格优秀供方! |
|||
Motorola/MOTOROLA/摩托罗拉/摩 |
21+ |
TO-92 |
249 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MOTOROLA |
9442+ |
TO-92 |
249 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CARTER |
98 |
14800 |
|||||
MOTOROLA |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
2N41芯片相关品牌
2N41规格书下载地址
2N41参数引脚图相关
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- 2N4068
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- 2N4063
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- 2N4060
- 2N406
- 2N4059
2N41数据表相关新闻
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DdatasheetPDF页码索引
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