40V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104 mΩ for a low equivalent On-Resistance • hFE specified up to -3A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA e

PNP, 40V, 3A, DFN2020-3

40V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104 mΩ for a low equivalent On-Resistance • hFE specified up to -3A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA e

40V PNP LOW SATURATION SWITCHING TRANSISTOR

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封装/外壳：3-UDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 3A DFN2020B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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