40V, SOT23, PNP low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 40V forward blocking voltage Applications • MOSFET and IGBT gate drivin

40V, SOT23, PNP low power transistor

Features • BVCEO > -40V • BVECO > --3V • IC = -1.5A Continuous Collector Current • VCE(sat)

PNP, 40V, 1.5A, SOT23

40V, SOT23, PNP low power transistor

Features • BVCEO > -40V • BVECO > --3V • IC = -1.5A Continuous Collector Current • VCE(sat)

40V, SOT23, PNP low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 40V forward blocking voltage Applications • MOSFET and IGBT gate drivin

40V PNP LOW POWER TRANSISTOR IN SOT23

文件：184.33 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 1.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SPI Serial EEPROMs

Description The AT25010/020/040 provides 1024/2048/4096 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 128/256/512 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low voltage operati

SPI Serial Extended TEMPERATURE EEPROMS 1K 2K 4K

Description The AT25010A/020A/040A provides 1024/2048/4096 bits of serial electrically-erasable programmable read-only memory (EEPROM) organized as 128/256/512 words of 8 bits each. The device is optimized for use in many automotive applications where low-power and low-voltage operation are essen

2.50mm PITCH CONNECTOR

文件：240 Kbytes Page：1 Pages

2.50mm PITCH CONNECTOR

文件：240 Kbytes Page：1 Pages

SPI Serial EEPROMs

文件：155.77 Kbytes Page：17 Pages