20V PNP high gain transistor in SOT89

Features • BVCEO > -20V • High current capability Max Continuous Current IC = -6A • Low saturation voltage VCE(sat)

20V PNP high gain transistor

Description Packaged in the SOT89 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT89 package • High gain • High peak current

PNP, 20V, 6A, SOT89

20V PNP high gain transistor in SOT89

Features • BVCEO > -20V • High current capability Max Continuous Current IC = -6A • Low saturation voltage VCE(sat)

20V PNP high gain transistor

Description Packaged in the SOT89 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT89 package • High gain • High peak current

20V PNP HIGH GAIN TRANSISTOR IN SOT89

文件：267.51 Kbytes Page：7 Pages

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 6A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20V, SOT23F, NPN high gain power transistor

Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features

20V, SOT23F, NPN high gain power transistor

Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features

20V, SOT23F, NPN high gain power transistor

Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features

20V, SOT23F, NPN high gain power transistor

Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Features

20V NPN HIGH GAIN POWER TRANSISTOR

文件：340.03 Kbytes Page：7 Pages