20V NPN LOW SATURATION TRANSISTOR

Features and Benefits • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47 mΩ for a low equivalent On-Resistance • hFE specified up to 6A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA effic

NPN, 20V, 4.5A, DFN2020-3

20V NPN LOW SATURATION TRANSISTOR

Features and Benefits • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47 mΩ for a low equivalent On-Resistance • hFE specified up to 6A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA effic

20V NPN LOW SATURATION TRANSISTOR

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封装/外壳：3-UDFN 包装：散装 描述：TRANS NPN 20V 4.5A DFN2020B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Recording and playing amplifier IC for answering telephones

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NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 500 mA) • Low voltage (max. 55 V) • High DC current gain. APPLICATIONS • General purpose low frequency • Relay drivers.

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Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

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Description; The NTE618 is a silicon varactor diode with a good linearity and high capacitance ratio that is capable of beinf operated from a low voltage. This device is intended for use in AM receiver electronic tuning applications. Features: ● High Capacitance Ratio: CR = 15.5 (Min) ● Guaran