100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

100V, SOT23, NPN medium power transistor

Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip

100V NPN high gain transistor

Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • High power dissipation SOT223 package • High gain • Low saturation vo

100V NPN high gain transistor in SOT223

Features • BVCEX > 180V • BVCEO > 100V • BVECO > 6V • IC = 3A High Continuous Current • Low Saturation Voltage VCE(sat)

100V NPN high gain transistor in SOT223

Features • BVCEX > 180V • BVCEO > 100V • BVECO > 6V • IC = 3A High Continuous Current • Low Saturation Voltage VCE(sat)

100V NPN high gain transistor in SOT223

Features • BVCEX > 180V • BVCEO > 100V • BVECO > 6V • IC = 3A High Continuous Current • Low Saturation Voltage VCE(sat)

100V NPN high gain transistor

Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • High power dissipation SOT223 package • High gain • Low saturation vo

100V NPN high gain transistor

Description Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • High power dissipation SOT89 package • High gain • Low saturation volt

100V NPN high gain transistor in SOT89

Features • BVCEO > 100V • BVECO > 6V • IC = 2.5A Continuous Collector Current • ICM = 3.5A Peak Collector Current • VCE(SAT)

100V NPN high gain transistor

Description Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • High power dissipation SOT89 package • High gain • Low saturation volt

100V NPN high gain transistor in SOT89

Features • BVCEO > 100V • BVECO > 6V • IC = 2.5A Continuous Collector Current • ICM = 3.5A Peak Collector Current • VCE(SAT)

NPN, 100V, 3A, SOT223

QFZT653

文件：511.87 Kbytes Page：7 Pages

NPN, 100V, 3A, SOT223

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

100V NPN MEDIUM POWER TRANSISTOR

文件：393.84 Kbytes Page：8 Pages

NPN, 100V, 2.5A, SOT89

100V NPN high gain transistor in SOT89

文件：415.75 Kbytes Page：8 Pages

100V NPN MEDIUM POWER TRANSISTOR

文件：393.84 Kbytes Page：8 Pages

100V NPN MEDIUM POWER TRANSISTOR

文件：393.84 Kbytes Page：8 Pages

Customer Specification

Construction Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA (25742), Web: www.alphawire.com Diameters (In) 1) Component 1 10 X 1 COND a) Conductor 24 (7/32) AWG Tinned Copper 0.024 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.044 (1) Color Code Alpha Wire

Capacitive Sensor

Features ■2 cable entries (axial, radial) ■Smooth barrel, Ø 40 mm ■Plastic, ABS ■Fine adjustment via potentiometer ■DC 4-wire, 10…65 VDC ■Complementary contact, PNP output ■Terminal chamber Functional principle Capacitive proximity switches are designed for non-contact and wear-free dete

Security & Sound, 2 Conductor 14 AWG BC, Armored

Product Description Security & Commercial Audio Cable, Armored, 2 Conductor 14 AWG stranded (19x27) bare copper conductors with polyolefin insulation, PVC jacket.

bq25100B 250-mA Single Cell Li-Ion Battery Chargers, 1-mA Termination, 75-nA Battery Leakage

1 Features 1• Charging – 1% Charge Voltage Accuracy – 10% Charge Current Accuracy – Supports Applications for Very Low Charge Currents - 10 mA to 250 mA – Supports Minimum 1-mA Charge Termination Current – Ultra Low Battery Output Leakage Current - Maximum 75 nA – Adjustable Term

75-nA Battery Leakage

文件：1.5521 Mbytes Page：32 Pages