100V, SOT23F, NPN high gain power transistor

Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance Features

100V, SOT23F, NPN high gain power transistor

Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Feat

100V, SOT23F, NPN high gain power transistor

Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Feat

100V, SOT23F, NPN high gain power transistor

Description Advanced process capability has been used to maximise the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance Features

100V NPN low sat medium power transistor in SOT223

Features • BVCEO > 100V • IC = 5.5A Continuous Collector Current • ICM = 10A Peak Pulse Current • Low Saturation Voltage VCE(sat)

100V NPN low sat medium power transistor in SOT223

Features • BVCEO > 100V • IC = 5.5A Continuous Collector Current • ICM = 10A Peak Pulse Current • Low Saturation Voltage VCE(sat)

100V NPN medium power transistor in SOT89

Features • BVCEO > 100V • IC = 5.25A High Continuous Current • Low Saturation Voltage VCE(sat)

100V NPN medium power transistor in SOT89

Features • BVCEO > 100V • IC = 5.25A High Continuous Current • Low Saturation Voltage VCE(sat)

NPN, 100V, 4.5A, SOT23F

100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

文件：341.84 Kbytes Page：7 Pages

100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

文件：341.84 Kbytes Page：7 Pages

NPN, 100V, 5.5A, SOT223

100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

文件：503.98 Kbytes Page：7 Pages

100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

文件：503.98 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 5.5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN, 100V, 5.25A, SOT89

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 5.25A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

8-BIT 20 MSPS VIDEO A/D CONVERTER (CMOS)

GENERAL DESCRIPTION EM19100 is an 8-bit CMOS A/D converter for video use. The adoption of a 2-step parallel system achieves low consumption at a maximum conversion speed of 20 MSPS typical. FEATURES • 20MSPS maximum conversion speed • Build-in sampling and hold circuit • Internal self-bias re

8-BIT 20 MSPS VIDEO A/D CONVERTER (CMOS)

GENERAL DESCRIPTION EM19100 is an 8-bit CMOS A/D converter for video use. The adoption of a 2-step parallel system achieves low consumption at a maximum conversion speed of 20 MSPS typical. FEATURES • 20MSPS maximum conversion speed • Build-in sampling and hold circuit • Internal self-bias re

8-BIT 20 MSPS VIDEO A/D CONVERTER (CMOS)

GENERAL DESCRIPTION EM19100 is an 8-bit CMOS A/D converter for video use. The adoption of a 2-step parallel system achieves low consumption at a maximum conversion speed of 20 MSPS typical. FEATURES • 20MSPS maximum conversion speed • Build-in sampling and hold circuit • Internal self-bias re

THROUGH HOLE CLOCK OSCILLATORS - 3 STATE HCMOS COMPATIBLE

文件：106.08 Kbytes Page：2 Pages

FOR AUTOMOTIVE 125 OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)

文件：2.32508 Mbytes Page：39 Pages