位置：首页 > IC中文资料第147页 > ZXT10P12DE6TC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ZXT10P12DE6TC | 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res | Zetex |   | |
ZXT10P12DE6TC | 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR Features • BVCEO > -12V • IC = - 3A Continuous Collector Current • ICM = -10A Peak Pulse Current • RCE(sat) = 65mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-100mV max @ 1A) • hFE Characterized up to -10A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS | DIODES 美台半导体 | | |
ZXT10P12DE6TC | 封装/外壳：SOT-23-6 包装：卷带（TR） 描述：TRANS PNP 12V 3A SOT23-6 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | |
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res | Zetex | | ||
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR Features • BVCEO > -12V • IC = - 3A Continuous Collector Current • ICM = -10A Peak Pulse Current • RCE(sat) = 65mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-100mV max @ 1A) • hFE Characterized up to -10A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS | DIODES 美台半导体 | | ||
12V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 文件：438.3 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR Features • BVCEO > -12V • IC = - 3A Continuous Collector Current • ICM = -10A Peak Pulse Current • RCE(sat) = 65mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-100mV max @ 1A) • hFE Characterized up to -10A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS | DIODES 美台半导体 | | ||
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res | Zetex | |
ZXT10P12DE6TC产品属性
- 类型
描述
- 型号
ZXT10P12DE6TC
- 功能描述
两极晶体管 - BJT 12V PNP SuperSOT4
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
25+ |
SOT-23-6 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ZETEX |
24+ |
20000 |
|||||
DIODES |
25+ |
120900 |
原装现货!可长期供货! |
||||
DIODES/美台 |
24+ |
SOT26 |
9600 |
原装现货,优势供应,支持实单! |
|||
ZETEX |
2016+ |
SOT23-6 |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES |
17PB |
SOT23-6 |
60839 |
现货 |
|||
ZETEX |
24+ |
SOT163 |
2600 |
原装现货假一赔十 |
|||
24+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
DIODES/美台 |
24+ |
N/A |
500000 |
美台原厂超低价支持 |
|||
NK/南科功率 |
2025+ |
SOT-23-6 |
986966 |
国产 |
ZXT10P12DE6TC芯片相关品牌
ZXT10P12DE6TC规格书下载地址
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瀚佳科技(深圳)有限公司 专业工厂一站式全套配单服务
2019-1-13
DdatasheetPDF页码索引
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