位置：首页 > IC中文资料第147页 > ZXMN6A08E6TC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ZXMN6A08E6TC | 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low ga | Zetex |   | |
ZXMN6A08E6TC | 60V N-CHANNEL ENHANCEMENT MODE MOSFET 文件：470 Kbytes Page：7 Pages | Zetex | | |
ZXMN6A08E6TC | 60V N-CHANNEL ENHANCEMENT MODE MOSFET 文件：573.68 Kbytes Page：8 Pages | DIODES 美台半导体 | | |
60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low ga | Zetex | | ||
60V N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Fast Switching Speed • Low Gate Drive • Low Threshold • Tot | DIODES 美台半导体 | | ||
60V N-CHANNEL ENHANCEMENT MODE MOSFET 文件：470 Kbytes Page：7 Pages | Zetex | | ||
60V N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Fast Switching Speed • Low Gate Drive • Low Threshold • Tot | DIODES 美台半导体 | | ||
60V N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Fast Switching Speed • Low Gate Drive • Low Threshold • Tot | DIODES 美台半导体 | |
ZXMN6A08E6TC产品属性
- 类型
描述
- 型号
ZXMN6A08E6TC
- 功能描述
MOSFET 60V N-Chnl UMOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZETEX |
20+ |
SOT-23-6 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
ZETEX |
2025+ |
SOT-23-6 |
7695 |
全新原厂原装产品、公司现货销售 |
|||
DIODES/美台 |
24+ |
SOT-223 |
60000 |
||||
DIODES/美台 |
24+ |
SOT-223 |
9600 |
原装现货,优势供应,支持实单! |
|||
Diodes Incorporated |
21+ |
SOT-223 |
1000 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
|||
DIODES/美台 |
24+ |
SOT223 |
786000 |
全新原装假一罚十 |
|||
ZETEX |
2023+PB |
SOT-23-6 |
39000 |
||||
ZETEX |
19+ |
SOT-23-6 |
200000 |
||||
DIODES/美台 |
24+ |
NA/ |
18030 |
原装现货,当天可交货,原型号开票 |
|||
ZETEX |
23+ |
SOT-23-6 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
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ZXMN6A08E6TC规格书下载地址
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瀚佳科技(深圳)有限公司 专业工厂一站式全套配单服务
2019-1-12
DdatasheetPDF页码索引
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