20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=20V; RDS(ON)=0.055 Ω D=4.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management appli

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.055 Ω ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power managemen

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.055 Ω ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power managemen

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=20V; RDS(ON)=0.055 Ω D=4.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management appli

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=20V; RDS(ON)=0.055 Ω D=4.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management appli

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.055 Ω ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power managemen

N-CHANNEL ENHANCEMENT MODE MOSFET

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：196.49 Kbytes Page：7 Pages

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：196.49 Kbytes Page：7 Pages

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：647.18 Kbytes Page：7 Pages

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：196.49 Kbytes Page：7 Pages

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：196.49 Kbytes Page：7 Pages

2.0 AMPS. SILICON RECTIFIERS???

Features • Low forward voltage drop • High current capability • High reliability • High surge current capability

GENERAL PURPOSE PLASTIC RECTIFIERS

Features • Diffused junction • High current capability and low forward voltage drop • Surge overload rating to 70A peak

2 Amp Silicon Rectifier 50 to 1000 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Forward Voltage Drop • High Current Capability • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level

2.0A RECTIFIER

Features • Diffused Junction • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 70A Peak • Lead Free Finish, RoHS Compliant (Note 3)

2.0A RECTIFIER

文件：62.89 Kbytes Page：3 Pages