SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features and Benefits • V(BR)DSS > -200V • RDS(on) ≤ 80Ω @ VGS = -10V • Maximum continuous drain current ID = -35mA

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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P-channel Enhancement Mode Mosfet

P-Channel 200V (D-S) MOSFET

FEATURES •Halogen-free According to IEC 61249-2-21 Available •TrenchFET® Power MOSFET •Ultra Low On-Resistance •Small Size APPLICATIONS •Active Clamp Circuits in DC/DC Power Supplies

200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23

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200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23

文件：466.84 Kbytes Page：8 Pages

200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23

文件：466.84 Kbytes Page：8 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 5 X 1 PAIR a) Conductor 22 (7/30) AWG Tinned Copper 0.030 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.050 (1) Color Code Alpha Wire Color Code A Pair Color Pair Color Pair Color 1 BLACK-RED 3 BLACK-GREEN 5 BLACK-BROWN 2 BLACK-WHITE 4 BLACK-BL

DC Power Surge Protective Device

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Original Strain Relief Bushings

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CUSTOMER PRODUCT SPECIFICATION

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Metal Case With Ceramic insulator

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