N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

FEATURES * VDS - 200V * RDS(ON) - 10Ω PARTMARKING DETAIL - ZVNL120

SOT223 N-CHANNEL ENHANCEMENT MODE

Description This new generation trench MOSFET features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features and Benefits • High Voltage • Low On-resistance • Fast Switching Speed • Low G

SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

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N-CHANNEL ENHANCEMENT MODE MOSFET

200V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：567.48 Kbytes Page：6 Pages

200V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：567.48 Kbytes Page：6 Pages

SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

文件：58.78 Kbytes Page：3 Pages

200V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：567.48 Kbytes Page：6 Pages

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

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Precision Wirewound Resistors

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Temperature Sensors Line Guide

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