100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This MOSFET is suitable for general p

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 100 Volt VDS * RDS(on)= 10Ω COMPLEMENTARY TYPE - ZVP3310F PARTMARKING DETAIL - MF

SOT23 P-CHANNEL ENHANCEMENT SOT23 P-CHANNEL ENHANCEMENT

FEATURES * 100 Volt VDS * RDS(on)=20Ω COMPLEMENTARY TYPE - ZVN3310F PARTMARKING DETAIL - MR

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This MOSFET is suitable for general p

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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N-Channel 100-V (D-S) MOSFET

文件：1.75283 Mbytes Page：8 Pages

3310 - 9 mm Square Sealed Panel Control

Features ■ Conductive plastic ■ PC board and bushing mount ■ Plastic bushing and plastic shaft ■ Withstands typical industrial washing processes ■ Compact package saves board and panel space ■ Audio taper versions available as special order ■ RoHS compliant versions available*

200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time

9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time

9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time

Lockit™ Cable Holders - Arrowhead Mount

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28 (7/36) AWG Tinned Copper

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