位置：首页 > IC中文资料第6470页 > ZVN
ZVN价格
参考价格：￥1.4470
型号：ZVN0124A 品牌：Diodes 备注：这里有ZVN多少钱，2025年最近7天走势，今日出价，今日竞价，ZVN批发/采购报价，ZVN行情走势销售排行榜，ZVN报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *240VoltVDS *RDS(on)=16Ω APPLICATIONS *Telephonehandsets | DIODESDiodes Incorporated 美台半导体 |  |   | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *240VoltVDS *RDS(on)=16Ω APPLICATIONS *Telephonehandsets | Zetex Zetex Semiconductors |  | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *400VoltVDS *RDS(on)=50Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Features •400VoltVDS •RDS(ON)=50Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *450VoltsVDS *RDS(on)=50Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *450VoltsVDS *RDS(on)=50Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *450VoltsVDS *RDS(on)=50Ω *Easeofparalleling PARTMARKINGDETAIL–ZVN0545 | Zetex Zetex Semiconductors | | | |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FeaturesandBenefits •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability MechanicalData •Case:SOT223 •CaseMaterial:MoldedPlastic,“Green”MoldingCompound.ULFlammabilityCla | DIODESDiodes Incorporated 美台半导体 | | | |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FeaturesandBenefits •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability MechanicalData •Case:SOT223 •CaseMaterial:MoldedPlastic,“Green”MoldingCompound.ULFlammabilityCla | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *90VoltVDS *Lowinputcapacitance *Fastswitching | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *90VoltVDS *Lowinputcapacitance *Fastswitching | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVDS *RDS(on)=2Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDS(on)=2Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVDS *RDS(on)=2Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVDS *RDS(on)=2Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDS(on)=2Ω | Zetex Zetex Semiconductors | | | |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FeaturesandBenefits •V(BR)DSS>60V •RDS(ON)≤2Ω@VGS=10V •MaximumContinuousDrainCurrentID=0.71A •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability Applications •DC | DIODESDiodes Incorporated 美台半导体 | | | |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FeaturesandBenefits •V(BR)DSS>60V •RDS(ON)≤2Ω@VGS=10V •MaximumContinuousDrainCurrentID=0.71A •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability Applications •DC | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *100VoltVDS *RDS(on)=4Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *100VoltVDS *RDS(on)=4Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *100VoltVDS *RDS(on)=4Ω | Zetex Zetex Semiconductors | | | |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *100VoltVDS *RDS(on)=4Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *6APULSEDRAINCURRENT *FASTSWITCHINGSPEED | Zetex Zetex Semiconductors | | | |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FeaturesandBenefits •6APulseDrainCurrent •FastSwitchingSpeed •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability Applications •DC-DCConverters •Solenoids/RelayDriver | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *200VoltVDS *RDS(on)=10Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *200VoltVDS *RDS(on)=10Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *200VoltVDS *RDS(on)=10Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *200VoltVDS *RDS(on)=10Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES: *VDS-200V *RDS(ON)-10Ω | Zetex Zetex Semiconductors | | | |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FeaturesandBenefits •V(BR)DSS>200V •RDS(ON)≤10Ω@VGS=10V •MaximumContinuousDrainCurrentID=0.32A •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability Applications • | DIODESDiodes Incorporated 美台半导体 | | | |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FeaturesandBenefits •V(BR)DSS>200V •RDS(ON)≤10Ω@VGS=10V •MaximumContinuousDrainCurrentID=0.32A •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability Applications • | DIODESDiodes Incorporated 美台半导体 | | | |
N-Channel Enhancement Mode Power MOSFET GENERALFEATURES Vos=200V mo=10A@Vos=10v. Ros$1350@Vos=10V 507-223package. | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 |  | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *350VoltVDS *RDS(on)=35Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *350VoltVDS *RDS(on)=35Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *350VoltVDS *RDS(on)=35Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDSon)=5Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDSon)=5Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *RDS(on)=5Ω *60VoltVDS | Zetex Zetex Semiconductors | | | |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *RDS(on)=5Ω *60VoltVDS | DIODESDiodes Incorporated 美台半导体 | | | |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *RDS(on)=5Ω *60VoltVDS | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *100VoltVDS *RDS(on)=10Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *100VoltVDS *RDS(on)=10Ω | DIODESDiodes Incorporated 美台半导体 | | | |
100V N-CHANNEL ENHANCEMENT MODE MOSFET DescriptionandApplications ThisMOSFETutilisesastructurethatcombineslowinputcapacitancewithrelativelylowon-resistanceandhasanintrinsicallyhigherpulsecurrenthandlingcapabilityinlinearmodethanacomparabletrenchtechnologystructure.ThisMOSFETissuitableforgeneralp | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *100VoltVDS *RDS(on)=10Ω COMPLEMENTARYTYPE-ZVP3310F PARTMARKINGDETAIL-MF | Zetex Zetex Semiconductors | | | |
SOT23 P-CHANNEL ENHANCEMENT SOT23 P-CHANNEL ENHANCEMENT FEATURES *100VoltVDS *RDS(on)=20Ω COMPLEMENTARYTYPE-ZVN3310F PARTMARKINGDETAIL-MR | DIODESDiodes Incorporated 美台半导体 | | | |
100V N-CHANNEL ENHANCEMENT MODE MOSFET DescriptionandApplications ThisMOSFETutilisesastructurethatcombineslowinputcapacitancewithrelativelylowon-resistanceandhasanintrinsicallyhigherpulsecurrenthandlingcapabilityinlinearmodethanacomparabletrenchtechnologystructure.ThisMOSFETissuitableforgeneralp | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *200VoltVDS *RDS(on)=25Ω PARTMARKINGDETAIL–MU | Zetex Zetex Semiconductors | | | |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *200VoltVDS *RDS(on)=25Ω | DIODESDiodes Incorporated 美台半导体 | | | |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *200VoltVDS *RDS(on)=25Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET PARMARKINGDETAIL-MZ | Zetex Zetex Semiconductors | | | |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Features •BVDSS>60V •RDS(on)≤2.5Ω@VGS=10V •MaximumcontinuousdraincurrentID=200mA •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 美台半导体 | | | |
N-Channel 60-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET IN SOT23 Features •BVDSS>60V •RDS(on)≤2.5Ω@VGS=10V •MaximumcontinuousdraincurrentID=200mA •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDS(on)=1Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDS(on)=1Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDS(on)=1Ω *Repetitiveavalancherating *Notransientprotectionrequired *Characterisedfor5Vlogicdrive APPLICATIONS *Automotiverelaydrivers *Steppermotordriver | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDS(on)=1Ω *Repetitiveavalancherating *Notransientprotectionrequired *Characterisedfor5Vlogicdrive APPLICATIONS *Automotiverelaydrivers *Steppermotordriver | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDS(on)=1Ω | Zetex Zetex Semiconductors | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *60VoltVDS *RDS(on)=1Ω | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES *Compactgeometry *Fastswitchingspeeds *NosecondarybreakdownandExcellenttemperaturestability *Highinputimpedanceandlowcurrentdrive *Easeofparralleling APPLICATIONS *DC-DCconverters *Solenoid/relaydriversforautomotiveapplications *Steppermotordrive | Zetex Zetex Semiconductors | | |
ZVN产品属性
- 类型
描述
- 型号
ZVN
- 制造商
ZETEX
- 制造商全称
ZETEX
- 功能描述
N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZETEX |
24+ |
60 |
现货供应 |
||||
ZTX |
23+ |
E-LINE-3 |
6000 |
原装正品,假一罚十 |
|||
3655 |
24+ |
ZETEX |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
DIODES |
1651+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
DIODES/美台 |
2447 |
EP3SC |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
DIODES/美台 |
21+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
ZETEX |
24+ |
E-Line |
6010 |
只做原装正品 |
|||
DIODES/美台 |
22+ |
EP3SC |
90000 |
正规代理渠道假一赔十 |
|||
DiodesZetex |
24+ |
NA |
3061 |
进口原装正品优势供应 |
|||
DIODES/美台 |
20+ |
SMD |
88800 |
DIODES原装优势主营型号-可开原型号增税票 |
ZVN芯片相关品牌
ZVN规格书下载地址
ZVN参数引脚图相关
- 报警器电路图
- 报警电路
- 保险丝
- 保险器件
- 保健设备
- 保护板
- 半导体制冷
- 半导体模块
- 半导体材料
- 板对板连接器
- 白光LED
- 白炽灯
- 按钮开关
- 安全继电器
- 安规电容
- 安防系统
- 安防监控系统
- 安防监控
- 安宝路
- ZWB-14F
- ZWB-14E
- ZWB-14D
- ZWB-14C
- ZWB-14B
- ZWB-14A
- ZWB-1
- ZW25RIA
- zw10
- ZV-Q-2
- ZVP4525
- ZVP4105
- ZVP3310
- ZVP3306
- ZVP2110
- ZVN4525
- ZVN3310F
- ZVN3310A
- ZVN3306FTA-CUTTAPE
- ZVN3306FTA
- ZVN3306F
- ZVN3306ASTZ
- ZVN3306A
- ZV-N-2S
- ZVN2535
- ZVN2120GTA
- ZVN2110GTA
- ZVN2110ASTZ
- ZVN2110A
- ZVN2106GTA
- ZVN2106G
- ZVN2106ASTZ
- ZVN2106A
- ZVN2106
- ZV-N-2
- ZVN0545GTA
- ZVN0545ASTZ
- ZVN0545A
- ZVN0124A
- ZVN0120
- ZVG90W
- ZVG88W
- ZVG87W
- ZVG85WA
- ZVG79W
- ZVG78W
- ZVG77W
- ZVG74W
- ZVG69W
- ZVG67W
- ZVG66W
- ZVG65W
- ZVG60W
- ZVG56W
- ZVG55W
- ZVG54W
- ZVG53W
- ZVG50FW
- ZVG48WA
- ZVG47W
- ZVB12GIV1
- ZV952V2TA
- ZV932V2TA
- ZV931V2TA
- ZV810
- ZV50E70C01
- ZV50E10F01
- ZV50E10B01
- ZV50E10A01
- ZV50B60A01
- ZV50B50A01
- ZV30K1206T201N
- ZV2QA22S
- ZV2-NA2-2S
- ZV2-N-2S
- ZV2N222S
- ZV25K1206T201N
- ZV20K1206T201N
- ZV17K1206T201N
- ZV10B70A01
ZVN数据表相关新闻
ZWQ1305224/A
ZWQ1305224/A
2021-1-18ZXBM5210-S-13 电机驱动器，控制器
ZXBM5210-S-13输出端数量：2Output，工作频率：100kHz，工作温度范围：-40Cto+85C，工作电源电压：3Vto18V
2020-9-18ZUS32405，专业进口电源，兴中扬电子
ZUS32405，专业进口电源，兴中扬电子
2020-3-7ZV60K2220801NIR1HT
ZVHT系列低压高温压敏电阻 Bourns的低压压敏电阻覆盖3V至170V的宽直流工作电压范围
2020-3-7ZV11K1210401NIR1
ZV系列低压压敏电阻 Bourns的低压压敏电阻覆盖3V至170V的宽直流工作电压范围
2020-3-7ZV系列低压变阻器，ZV130K1812T301N
Stackpole的表面贴装低压多层变阻器技术
2019-9-16
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
