NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV = 80V * Very low saturation voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight converters * Emergency lighting * DC-DC converters

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Features • BVCEO > 25V • IC = 4A High Continuous Collector Current • ICM = 20A Peak Pulse Current • TJ up to 200°C for High Temperature Operation • Low Saturation Voltage

25V NPN SILICON PLANARR MEDIUM POWER TRANSISTOR

Features • BVCEO > 25V • IC = 4A High Continuous Collector Current • ICM = 20A Peak Pulse Current • TJ up to 200°C for High Temperature Operation • Low Saturation Voltage

25V NPN SILICON PLANARR MEDIUM POWER TRANSISTOR

Features • BVCEO > 25V • IC = 4A High Continuous Collector Current • ICM = 20A Peak Pulse Current • TJ up to 200°C for High Temperature Operation • Low Saturation Voltage

封装/外壳：E-Line-3，成型引线 包装：卷带（TR） 描述：TRANS NPN 10V 4A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN 10V 4A E-LINE

封装/外壳：E-Line-3 包装：散装 描述：TRANS NPN 10V 4A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

文件：118.03 Kbytes Page：4 Pages

25V NPN MEDIUM POWER TRANSISTOR IN E-LINE

文件：288.84 Kbytes Page：6 Pages

25V NPN MEDIUM POWER TRANSISTOR IN E-LINE

文件：288.84 Kbytes Page：6 Pages

25V NPN MEDIUM POWER TRANSISTOR IN E-LINE

文件：288.84 Kbytes Page：6 Pages

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

104/204 In-Line Threaded Diaphragm Seal

FEATURES „ 316L stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Flow through design reduces the possibility of clogging; ideal for viscous media, slurries and emulsions „ Large 21/2˝ diaphragm compatib

Smooth, high torque, roller ratchet handle

文件：254.3 Kbytes Page：3 Pages