Silicon-Power-Z-Diodes (non-planar technology)

Silicon-Power-Z-Diodes (non-planar technology) • Maximum power dissipation 1.3 W • Nominal Z-voltage 1..200 V • Plastic case DO-41 • Weight approx. 0.4 g • Plastic material has UL classification 94V-0 • Standard pa

Silicon Power Z-Diodes

Silicon-Power-Z-Diodes (non-planar technology) • Maximum power dissipation 1.3 W • Nominal Z-voltage 1..200 V • Plastic case DO-41 • Weight approx. 0.4 g • Plastic material has UL classification 94V-0 • Standard pa

Silicon-Power-Zener Diodes (non-planar technology)

文件：152.94 Kbytes Page：3 Pages

Silicon-Power-Zener Diodes

文件：153.04 Kbytes Page：3 Pages

Silicon-Power-Zener Diodes

文件：141.3 Kbytes Page：3 Pages

Silicon Power Z-Diodes

Silicon Power Z-Diodes (non-planar technology) • Maximum power dissipation 1.3 W • Nominal Z-voltage 10...200 V • Plastic case DO-41 • Weight approx. 0.4 g • Plastic material has UL classification 94V-0 • St

Zener Diodes

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll