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ZPY120B

Silicon Power Z-Diodes

Silicon Power Z-Diodes (non-planar technology) • Maximum power dissipation 1.3 W • Nominal Z-voltage 10...200 V • Plastic case DO-41 • Weight approx. 0.4 g • Plastic material has UL classification 94V-0 • St

DIOTEC

德欧泰克

ZPY120B

Zener Diodes

DIOTEC

德欧泰克

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

MOTOROLA

摩托罗拉

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

NEC

瑞萨

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

MOTOROLA

摩托罗拉

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

ZPY120B产品属性

  • 类型

    描述

  • Package:

    DO-41

  • Vzmin:

    118.00 V

  • Vznom:

    120.00 V

  • Vzmax:

    122.00 V

  • Iztest:

    5.00 mA

  • Ptot:

    1.300 W

  • Tjmax:

    150 °C

  • IR:

    1.000 µA

  • rzj:

    80.0 Ω

  • Cj:

    pF

  • VR:

    V

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