BIPOLAR TRANSISTOR H-BRIDGE

FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating

SM-8 BIPOLAR TRANSISTOR H-BRIDGE

Features • BJT H-Bridge • 2 x NPN + 2 x PNP • IC = 2.5A Continuous Collector Current • NPN Transistor ◾ BVCEO > 20V ◾ Low Saturation Voltage VCE(sat) -20V ◾ Low Saturation Voltage VCE(sat)

H-Bridge, 20V, 2.5A, SM-8

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 12 (65/30) AWG Tinned Copper 0.093 b) Insulation 0.012 Wall, Nom. MPPE 0.117+/- 0.002 (1) Print ALPHA WIRE ECOWIRE TM 12 AWG E163869-DB RU AWM 11028 105C 600V VW-1 --- CRU AWM I A/B 105C 600V FT1 CE ROHS (2) Color(s) WHITE, BLACK

High Current Toroid Inductors (with header)

Special Features • Low radiation • High current capacity • High inductance • Mounted on UL 94V-0 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C

N-Channel Enhancement Mode Field Effect Transistor

General Description SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. - RoHS Compliant - Halogen Free Featur

Customer Specification

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Dual Output, 75 Ohm BNC Circuit Board Mount, White Valox Case

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