Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

iglide® Q

Excellent wear resistance, especially for extreme loads Recommended for extreme pv values Good coefficient of friction Resistant to dirt

iglide® Q

Excellent wear resistance, especially for extreme loads Recommended for extreme pv values Good coefficient of friction Resistant to dirt

Radar Pulsed Power Transistor 20W, 1.2-1.4 GHz, 2ms Pulse, 10 Duty

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