丝印代码：J7A；SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23 SILICON VARIABLE CAPACITANCE FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance(IR Typically

Silicon 25V hyperabrupt varactor diodes

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE VAR CAP 100PF 25V SOT23-3 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

DIODE VAR CAP 100PF 25V SOT23-3

DIODE VAR CAPACITANCE SOT23-3

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT） 描述：DIODE VAR CAPACITANCE SOT23-3 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

P-Channel 2.5V Specified MOSFET

General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performa

Linear Integrated Circuit TV Horizontal Processor

Description: The NTE836 is a TV Horizontal Processor in an 8–Lead DIP type package that includes a phase detector, oscillator and pre–driver. This device is designed for use in all types of television receivers that have negative flyback inputs. Features: • Internal Shunt Regulator •

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH

DESCRIPTION The TS836 ultra low power integrated circuit incorporates a high stability band-gap voltage reference and a comparator with open drain output. The threshold voltage is set at 4.5V for TS836-4 by internal thermally matched resistances. The comparator exhibits a 20µs response (with 10

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

MicroConverter, Dual 16-Bit/24- Bit ADCs with Embedded 62 kB Flash MCU

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