Doubler

MACOM’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device. The XX1007-BD has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing capacitor eliminating the need for exter ·Integrated Gain, Doubler and Driver Stages\n·RoHS* Compliant\n·260°C Reflow Compatible\n·100% Visual Inspection to MIL-STD-883 Method 2010\n·100% On-Wafer RF, DC & Output Power Testing\n·On-Chip ESD Protection\n·40.0 dBc Fundamental Suppression\n·+21.0 dBm Output Saturated Power\n·Self-bias;

13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler

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Doubler

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13.5-17.0/27.0-34.0 GHz GaAs MMIC

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13.5-17.0/27.0-34.0 GHz GaAs MMIC

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Doubler

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13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler

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13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler

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PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 2400 V Mean on-state current 1270 A Surge current 19 kA

Photo Interrupter

Photo Interrupter For contactless SW, object detection Overview CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elem

uP Compatible, Double-Buffered D to A Converters

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uP Compatible, Double-Buffered D to A Converters

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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