RF POWER TRANSISTORS RF POWER TRANSISTORS

Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS RF POWER TRANSISTORS

Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode

Excellent thermal stability

Description The SD56120C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120C is designed for high gain and broadband performance operating in common source m

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：311.38 Kbytes Page：15 Pages