SINGLETMOSPOWERMOSFET3.0AMPERES20VOLTS

MediumPowerSurfaceMountProducts TMOSSingleP-ChannelFieldEffectTransistors MiniMOS™devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess. •UltraLowRDS(on)ProvidesHigherEfficiencyandExtendsBatteryLife •LogicLevelGat

PowerMOSFET3Amps,20VoltsP?묬hannelSO??

TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableofwithstandinghighenergyintheavalancheandcommutationmodesandthedrain−to−sourcediodehasaverylowreverserecoverytime.MiniMOSdevicesaredesignedforuseinlowvolt

Pch-100V-20APowerMOSFET

Features 1)Lowon-resistance 2)Highpowersmallmoldpackage 3)Pb-freeplating;RoHScompliant 4)100RgandUIStested 5)Halogenfree Application Switching

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

Dual-PEnhancementModeMOSFET

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