TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistors

2000MHz,60W,26VLATERALN–CHANNELBROADBANDRFPOWERMOSFETs N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationsatfrequenciesfrom1000to2400MHz.SuitableforFM,TDMA,CDMA,andmulticarrieramplifierapplications.TobeusedinclassA

CustomerSpecification

Construction 1)Component11X1BUSBAR a)Conductor14(SOLID)AWGTinnedCopper

Multi-turnHall-EffectPositionSensor

Multi-turn:Allelectricalanglesavailableupto3600° Non-contactHallEffecttechnology Compact25mmdiametersize Widetemperaturerange(-40~125°C) Lifecycle:10Mrotations Dust&waterresistant(IP67) Applications Controlvalvepositionfeedback Actuatormotorpo

GaAsMMICLOWNOISEAMPLIFIER,2.3-2.5GHz

GeneralDescription TheHMC286&HMC286EarelowcostLowNoiseAmplifiers(LNA)for2.3to2.5GHzspreadspectrumapplications.TheLNAprovides19dBofgainanda1.7dBnoisefigurefromasinglepositive+3Vpowersupplythatconsumesonly8.5mA.Thetypicaloutput1dBcompressionpo

Fuseholders-For3AG,5x20mm,or2AGFuses

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WihaTorqueControlBlades-ForEasyTorque,TorqueFix&TorqueVarioHandles

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