A tube for hot environment, 10-stage, 51mm (2) tube

[PHOTONIS] A tube for hot environment, 10-stage, 51mm (2) tube Applications : For scintillation counting and industrial photometry in high temperature environment up to 130°C. (Unless otherwise stated, all characteristics are given at 20°C)

Silicon NPN epitaxial planer transistor

For switching/digital circuits ■Features ● Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■Basic Part Number of Element ● UN1211 ×2 elements

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

A standard fast, 12-stage, 51mm (2) tube

[PHOTONIS] photomultiplier tubes A standard fast, 12-stage, 51mm (2) tube Applications : High and medium energy physics.

封装/外壳：模块 包装：散装 描述：XS2210 GNSS MOD GPS+GLONASS RF/IF，射频/中频和 RFID 射频收发器模块和调制解调器

P-channel MOSFET -20V, -0.5A

P-channel MOSFET -20V, -0.5A

文件：402.35 Kbytes Page：6 Pages

P-channel MOSFET -20V, -0.5A

P-channel MOSFET -20V, -0.5A

文件：400.69 Kbytes Page：6 Pages

N-channel MOSFET 20V, 0.3A

N-channel MOSFET 20V, 0.3A

文件：404.63 Kbytes Page：6 Pages

N-channel MOSFET 20V, 0.3A

文件：403.58 Kbytes Page：6 Pages

N-channel MOSFET 20V, 0.3A

文件：400.95 Kbytes Page：6 Pages

N-channel MOSFET 20V, 0.3A

文件：403.56 Kbytes Page：6 Pages

P-channel MOSFET -20V, -0.8A

文件：403.33 Kbytes Page：6 Pages

P-channel MOSFET -20V, -0.8A

文件：401.33 Kbytes Page：6 Pages

N-channel MOSFET 20V, 1A

文件：443.15 Kbytes Page：6 Pages

N-channel MOSFET 20V, 1A

文件：404.11 Kbytes Page：6 Pages

P-channel MOSFET -20V, -1.5A

文件：401.51 Kbytes Page：6 Pages

N-channel MOSFET 20V, 0.6A

文件：405.11 Kbytes Page：6 Pages

N-channel MOSFET 20V, 0.6A

文件：404.52 Kbytes Page：6 Pages

N-channel MOSFET 20V, 2A

文件：404.7 Kbytes Page：6 Pages