11.0-16.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to

11.0-16.0 GHz GaAs MMIC Power Amplifier

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A)

SINGLE-PHASE SILICON BRIDGE VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A FEA TURES l Surge overload rating—200 Amperes peak l Low forward voltage drop and reverse leakage l Small size, simple installation l Plastic package has Underwriter Laboratory

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surg

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages