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XP1006

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description\nMimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure X-Band 10W Power Amplifier\nFlange Package\n21.5 dB Large Signal Gain\n+40.5 dBm Saturated Output Power\n37% Power Added Efficiency\n100% On-Wafer RF, DC and Output Power Testing;

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

MIMIX

8.5-11.0 GHz GaAs MMIC Power Amplifier

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

文件:198.7 Kbytes Page:6 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

文件:198.7 Kbytes Page:6 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

文件:198.7 Kbytes Page:6 Pages

MIMIX

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

文件:198.7 Kbytes Page:6 Pages

MIMIX

Photo Interrupter

Photo Interrupter For contactless SW, object detection ■ Overview CNA1006N is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. Th

PANASONIC

松下

Integrated Circuit FM Multiplex Stereo Demodulator

Description: The NTE1006 is an integrated circuit in a 14–Lead DIP type package designed for use as an FM multiplex stereo demodulator. This device includes all the fundamental functions including a composite amp, doubler, decoder, separation controller, and lamp driver. Features: ● Suitable fo

NTE

uP Compatible, Double-Buffered D to A Converters

文件:369.16 Kbytes Page:22 Pages

NSC

国半

uP Compatible, Double-Buffered D to A Converters

文件:369.16 Kbytes Page:22 Pages

NSC

国半

uP Compatible, Double-Buffered D to A Converters

文件:369.16 Kbytes Page:22 Pages

NSC

国半

XP1006产品属性

  • 类型

    描述

  • 型号

    XP1006

  • 制造商

    MIMIX

  • 制造商全称

    MIMIX

  • 功能描述

    8.5-11.0 GHz GaAs MMIC Power Amplifier

更新时间:2026-7-31 18:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MIMIX
25+
原厂封装
32500
原装正品,欢迎询价
MACOM
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
MIMIX
2545+
SMD
4560
只做原装正品假一赔十为客户做到零风险!!
MIMIX
25+
NA
98192
一站式BOM配单
M/A-COM TECHNOLOGY SOLUTIONS
24+
N/A
34
原装原装原装
MIMIX
24+
SMD
500
“芯达集团”专营军工百分之百原装进口
Macom
专业军工
NA
1000
只做原装正品军工级部分订货
MIMIX/MA-
25+
模块
7200
百分百原装正品 真实公司现货库存 本公司只做原装 可
MACOM
2025+
QFN
2500
原装进口价格优 请找坤融电子!
MIMIX
2023+
3

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