位置:首页 > IC中文资料第8262页 > XP1006
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
XP1006 | 8.5-11.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base | MIMIX | ||
8.5-11.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base | MIMIX | |||
8.5-11.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base | MIMIX | |||
8.5-11.0 GHz GaAs MMIC Power Amplifier General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base | MIMIX | |||
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens | MIMIX | |||
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens | MIMIX | |||
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin General Description\nMimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure X-Band 10W Power Amplifier\nFlange Package\n21.5 dB Large Signal Gain\n+40.5 dBm Saturated Output Power\n37% Power Added Efficiency\n100% On-Wafer RF, DC and Output Power Testing; | MIMIX | |||
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens | MIMIX | |||
8.5-11.0 GHz GaAs MMIC Power Amplifier | MIMIX | |||
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin | MIMIX | |||
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin 文件:198.7 Kbytes Page:6 Pages | MIMIX | |||
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin 文件:198.7 Kbytes Page:6 Pages | MIMIX | |||
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin 文件:198.7 Kbytes Page:6 Pages | MIMIX | |||
8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin 文件:198.7 Kbytes Page:6 Pages | MIMIX | |||
Photo Interrupter Photo Interrupter For contactless SW, object detection ■ Overview CNA1006N is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. Th | PANASONIC 松下 | |||
Integrated Circuit FM Multiplex Stereo Demodulator Description: The NTE1006 is an integrated circuit in a 14–Lead DIP type package designed for use as an FM multiplex stereo demodulator. This device includes all the fundamental functions including a composite amp, doubler, decoder, separation controller, and lamp driver. Features: ● Suitable fo | NTE | |||
uP Compatible, Double-Buffered D to A Converters 文件:369.16 Kbytes Page:22 Pages | NSC 国半 | |||
uP Compatible, Double-Buffered D to A Converters 文件:369.16 Kbytes Page:22 Pages | NSC 国半 | |||
uP Compatible, Double-Buffered D to A Converters 文件:369.16 Kbytes Page:22 Pages | NSC 国半 |
XP1006产品属性
- 类型
描述
- 型号
XP1006
- 制造商
MIMIX
- 制造商全称
MIMIX
- 功能描述
8.5-11.0 GHz GaAs MMIC Power Amplifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MIMIX |
25+ |
原厂封装 |
32500 |
原装正品,欢迎询价 |
|||
MACOM |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
MIMIX |
2545+ |
SMD |
4560 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MIMIX |
25+ |
NA |
98192 |
一站式BOM配单 |
|||
M/A-COM TECHNOLOGY SOLUTIONS |
24+ |
N/A |
34 |
原装原装原装 |
|||
MIMIX |
24+ |
SMD |
500 |
“芯达集团”专营军工百分之百原装进口 |
|||
Macom |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
|||
MIMIX/MA- |
25+ |
模块 |
7200 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
MACOM |
2025+ |
QFN |
2500 |
原装进口价格优 请找坤融电子! |
|||
MIMIX |
2023+ |
3 |
XP1006芯片相关品牌
XP1006规格书下载地址
XP1006参数引脚图相关
- 保健设备
- 保护板
- 半导体制冷
- 半导体模块
- 半导体材料
- 板对板连接器
- 白光LED
- 白炽灯
- 按钮开关
- 安全继电器
- 安规电容
- 安防系统
- 安防监控系统
- 安防监控
- 安宝路
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- zigbee芯片
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- XP1006-FA-0N00
- XP1006-FA_07
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- XP1005-BD_11
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- XP1005
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- XP1004000-03
- XP1003-BD
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- XP1002001-04R
- XP1002001-03R
- XP1002000-05R
- XP1002000-04R
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- XP1002000-03
- XP1002000-01
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- XP06501
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- XP06214
- XP06211
- XP05601
- XP05554
- XP05531
- XP04878
- XP04654
- XP04601
- XP04501
- XP04401
XP1006数据表相关新闻
XPC240100B-02
XPC240100B-02
2023-5-11XMP-05V
XMP-05V
2022-7-13XP133A1235SR
XP133A1235SR
2021-11-29XP1001000-05R
XP1001000-05R
2021-9-30XP1458ER
https://hch01.114ic.com/
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TAIYO YUDEN的2,000 V X7R MLCC非常适用于逆变器和转换器
2020-6-2
DdatasheetPDF页码索引
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