| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -40A, RDS(ON) = 19mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 25mW @VGS = -4.5V. | CET-MOS 华瑞 |   | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -36A, RDS(ON) = 20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 26mW @VGS = -4.5V. RoHS compliant. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -40A, RDS(ON) = 19mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 25mW @VGS = -4.5V. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -36A, RDS(ON) = 20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 26mW @VGS = -4.5V. RoHS compliant. | CET-MOS 华瑞 | | ||
High-Speed USB and Audio DPDT Switch 文件：528.05 Kbytes Page：10 Pages | AOSMD 万国半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
TSSOP |
6618 |
公司现货库存,支持实单 |
|||
CET/華瑞 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
CET/華瑞 |
24+ |
NA/ |
27336 |
原装现货,当天可交货,原型号开票 |
|||
CET |
25+ |
TO-251 |
1890 |
原装正品,假一罚十! |
|||
CET |
TO-251 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VBsemi |
24+ |
TO252 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
CET/華瑞 |
23+ |
TO-251 TO-252 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SR |
23+ |
TO-251 |
5000 |
原装正品,假一罚十 |
|||
CET(华瑞) |
2447 |
TO-251(I-PAK) |
105000 |
80个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET |
23+ |
TO-251 |
12800 |
公司只有原装 欢迎来电咨询。 |
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DdatasheetPDF页码索引
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