Packaged HFET

The XF1001-SC is a high linearity Hetrojunction Field Effect Transistor (HFET) housed in an industry standard SOT-89 package. Optimum performance is achieved when the device is biased at a drain voltage of 8V and drain current of 300m. At this bias point, the device is capable of more than 30 dBm of ·46.5 dBm OIP3 @ 5.8 GHz\n·SOT-89 Package\n·30.0 dBm P1dB\n·10.0 dB Gain @ 6 GHz\n·15.5 dB Gain @ 2 GHz;

10DC-6.0 GHz1.0W Packaged HFETPage

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1.0W Packaged HFET

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Packaged HFETPage

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封装/外壳：TO-243AA 包装：托盘 描述：TRANS HFET 1W SOT89 分立半导体产品 晶体管 - FET，MOSFET - 射频

包装：盒 描述：EVAL MODULE,XF1001-SC-0G00,5800M 开发板，套件，编程器 射频评估和开发套件，开发板

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

10-Bit P Compatible A/D Converter

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10-Bit P Compatible A/D Converter

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