Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM 256 x 4

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

DESCRIPTION The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less

Nonvolatile Static RAM

AMC22C12-Q1 Automotive, Fast Response, Basic Isolated Window Comparator With Adjustable Threshold and Latch Function

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA • Wide high-side supply range: 3 V to 25 V • Low-side supply range: 2.7 V to 5.5 V • Adjustable threshold: – Window-comparator mode: ±20 mV to ±300 mV – Positive-comparator mode: 600 mV t

AMC22C12-Q1 Automotive, Fast Response, Basic Isolated Window Comparator With Adjustable Threshold and Latch Function

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA • Wide high-side supply range: 3 V to 25 V • Low-side supply range: 2.7 V to 5.5 V • Adjustable threshold: – Window-comparator mode: ±20 mV to ±300 mV – Positive-comparator mode: 600 mV t

AMC22C12 Fast Response, Basic Isolated Window Comparator With Adjustable Threshold and Latch Function

1 Features • Wide high-side supply range: 3 V to 27 V • Low-side supply range: 2.7 V to 5.5 V • Adjustable threshold: – Window-comparator mode: ±20 mV to ±300 mV – Positive-comparator mode: 600 mV to 2.7 V • Reference for threshold adjustment: 100 μA, ±1 • Trip threshold error: ±1 (max) at

AMC22C12 Fast Response, Basic Isolated Window Comparator With Adjustable Threshold and Latch Function

1 Features • Wide high-side supply range: 3 V to 27 V • Low-side supply range: 2.7 V to 5.5 V • Adjustable threshold: – Window-comparator mode: ±20 mV to ±300 mV – Positive-comparator mode: 600 mV to 2.7 V • Reference for threshold adjustment: 100 μA, ±1 • Trip threshold error: ±1 (max) at

AMC22C12 Fast Response, Basic Isolated Window Comparator With Adjustable Threshold and Latch Function

1 Features • Wide high-side supply range: 3 V to 27 V • Low-side supply range: 2.7 V to 5.5 V • Adjustable threshold: – Window-comparator mode: ±20 mV to ±300 mV – Positive-comparator mode: 600 mV to 2.7 V • Reference for threshold adjustment: 100 μA, ±1 • Trip threshold error: ±1 (max) at