Description

The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and

a thermally-enhanced surface-mount package with earless flange

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance, 2690 MHz, 48 V,

combined outputs

- Output power at P3dB = 340 W

- Drain efficiency = 70

- Gain = 16 dB

• Capable of handling 10:1 VSWR @48 V, 80 W (CW)

output power

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant