Description

The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance: 10 µs pulse

width, 10 duty cycle, 2690 MHz, 48 V

- Output power at P3dB = 300 W

- Efficiency = 62

- Gain = 19.1 dB

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Capable of handling 10:1 VSWR @48 V, 70 W (CW)

output power

• Pb-free and RoHS-compliant