Description

The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical CW performance, 1880 MHz, 48 V

- Output power at P3dB = 45 W

- Efficiency = 60.7

- Gain = 21.6 dB

• Human Body Model, Class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Capable of handling 10:1 VSWR @48 V, 40 W (CW)

output power

• RoHS-compliant