Description

The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility

transistor (HEMT) for use in the DC to 1400 MHz frequency band. It is a

input matched, high efficiency device in a thermally-enhanced package

with bolt-down flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical Pulsed CW performance, 960 – 1400 MHz, 50

V, single side, 128 µs pulse width, 10 duty cycle

- Output power at P3dB = 1400 W

- Efficiency = 68

- Gain = 17 dB

• Pb-free and RoHS compliant